Semikron SKM300GAL063D IGBT Module

SKM300GAL063D  not recommended for new design Features: .N channel,homogeneous silicon structure(NPT- Non punch-through IGBT ) .Low tail current with low temperature dependence .High short circuit capability, self limiting if term. G is clamped to E .Pos. temp.-coeff. of V CEsat .50 % less turn off losses .30 % less short circuit current .Very low C ies , C oes , C res .Latch-up free Fast & soft inverse CAL diodes .Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould .Large clearance (13 mm) and creepage distances (20 mm) Typical Applications: .Switching (not for linear use) .Switched mode power supplies .AC inverter servo drives .UPS uninterruptable power supplies .Welding inverters  

1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 300 V,–diF/dt = 2000 A/µs, VGE = 0 V 3) Use VGEoff = – 5 ... – 15 V 8) CAL = Controlled Axial Lifetime Technology 9) Compared to PT-IGBT   IGBT Module 600v 400a Semitrans 3