#IXYS, #VII75_06P1, #IGBT_Module, #IGBT, VII75-06P1 Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-12; VII75-06P1
Manufacturer Part Number: VII75-06P1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X12Pin Count: 12Manufacturer: IXYS CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 69 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X12JESD-609 Code: e4Number of Elements: 2Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 208 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Gold (Au) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-12