Toshiba MG100H2CK1 IGBT Module

Toshiba MG100H2CK1 is high-power transistor module that used in various applications where requiring high frequency switching.

The MG100H2CK1 has voltage rating 600V and maximum current rating 100A. It capable of handling high-power in power supplies, motor control, and welding equipments application.

The MG100H2CK1 features screw mount design, which allows for easy installation and maintenance. It also has wide operating temperature range of -40°C to 150°C, can be use in harsh environments.

MG100H2CK1 Specification:

Manufacturer Part Number: MG100H2CK1

Package Description: FLANGE MOUNT, R-PUFM-X5

Pin Count: 5

Manufacturer: Toshiba 

Case Connection: ISOLATED

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 550 V

Configuration: COMPLEX

DC Current Gain-Min (hFE): 200

JESD-30 Code: R-PUFM-X5

Number of Elements: 2

Number of Terminals: 5

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: NPN

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: SWITCHING

Transistor Element Material: SILICON

TRANSISTOR 100 A 550 V 2 CHANNEL NPN Si POWER TRANSISTOR 2-80B1A 5 PIN BIP General Purpose Power