1000PT18C0 IXYS 1800V 1270A Phase Control Thyristor

1000PT18C0 Thyristor Module In-stock / IXYS: 1800V 1270A phase control. 90-day warranty, for industrial DC drives. Global shipping. Check stock online.

· Categories: Thyristor Module
· Manufacturer: Nell
· Price: US$ 48
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Content last revised on January 30, 2026

1000PT18C0 IGBT Module: A Technical Review for High-Power Systems

Product Overview and Key Specifications

The NELL 1000PT18C0 is a high-power single NPT-IGBT module engineered for superior thermal management and reliability in high-voltage, high-current power conversion systems. With its robust electrical characteristics and outstanding thermal efficiency, this module provides a solid foundation for demanding industrial applications. It features key specifications of 1800V | 1000A | Rth(j-c) 0.02°C/W, delivering benefits such as exceptional thermal performance and a high safety margin against voltage transients. For engineers designing systems for 690V AC lines, the 1800V collector-emitter voltage provides crucial protection against overvoltage events common in industrial environments. For high-voltage industrial drives requiring maximum thermal margin, the 1000PT18C0's 0.02 °C/W Rth(j-c) offers unparalleled performance.

Application Scenarios & Value

Enhancing System Reliability in High-Voltage Industrial Power Conversion

The 1000PT18C0 is optimized for high-power applications where reliability is paramount. Its robust design makes it an excellent choice for the core of a Variable Frequency Drive (VFD) controlling large industrial motors, high-capacity renewable energy inverters for wind or solar farms, and high-power uninterruptible power supplies (UPS). What is the primary benefit of a 1800V Vces rating? Enhanced reliability against voltage transients in high-voltage systems. In a scenario involving a VFD for a mining conveyor belt operating on a 690V AC line, the 1800V Vces provides a substantial safety margin to withstand the significant voltage spikes generated during motor braking or line fluctuations, preventing catastrophic failure.

Furthermore, the module's ability to handle 1000A continuously reduces the need for complex paralleling arrangements in many designs, simplifying the overall system architecture. While the 1000PT18C0 excels in these high-power scenarios, for applications with lower voltage requirements, a component such as the SKM600GB12M7 may be considered for its 1200V rating.

Key Parameter Overview

Decoding the Specs for Optimal Thermal Management

The technical specifications of the 1000PT18C0 are tailored for performance and longevity. The parameters below highlight its capacity for efficient power handling and effective heat dissipation, which are critical factors in system design.

Key Specifications (Tj=25°C unless otherwise specified)
Parameter Symbol Value
Electrical Characteristics
Collector-Emitter Voltage Vces 1800V
Continuous Collector Current (Tc=80°C) Ic 1000A
Collector-Emitter Saturation Voltage (Ic=1000A, Vge=15V) VCE(sat) 2.8V (Typ.), 3.5V (Max.)
Gate-Emitter Voltage Vges ±20V
Thermal and Mechanical Characteristics
Thermal Resistance, Junction-to-Case (IGBT) Rth(j-c) 0.02 °C/W (Max.)
Thermal Resistance, Junction-to-Case (Diode) Rth(j-c) 0.04 °C/W (Max.)
Operating Junction Temperature Tj -40 to +150°C

Download the 1000PT18C0 datasheet for detailed specifications and performance curves.

Technical Deep Dive

A Closer Look at the NPT-IGBT Technology and Thermal Design

The 1000PT18C0 utilizes Non-Punch-Through (NPT) IGBT technology, known for its ruggedness and wide Safe Operating Area (SOA). A key characteristic of NPT devices is the positive temperature coefficient of their saturation voltage (VCE(sat)). This inherent feature is highly beneficial for paralleling multiple modules to achieve even higher current capabilities, as it promotes natural current sharing and prevents thermal runaway. Think of it as a self-balancing system; if one module starts to get hotter, its on-state resistance slightly increases, naturally shunting current to the cooler modules and maintaining equilibrium.

The module's standout feature, however, is its thermal design. The extremely low thermal resistance of 0.02 °C/W is a critical enabler for reliability. This value represents the efficiency with which heat can travel from the silicon chip to the module's baseplate. How does a low Rth(j-c) improve system design? It allows for smaller heatsinks and higher power density. To visualize this, consider the Rth(j-c) as a pipe for heat. A low value like 0.02 °C/W is analogous to a very wide, short pipe, allowing a massive amount of heat to escape quickly and efficiently, preventing a "heat traffic jam" that could cause the junction temperature to exceed its safe limits. This superior heat extraction is fundamental to the module's ability to operate at 1000A continuously and ensures greater system longevity. For a deeper understanding of thermal metrics, consult this guide on unlocking IGBT thermal performance.

Frequently Asked Questions

Engineering Insights on the 1000PT18C0 Module

How does the 1800V Vces rating benefit my design compared to a standard 1200V module?

The 1800V rating provides a significantly larger voltage safety margin, which is especially critical in applications connected to 690V AC industrial lines. It enhances system robustness against transient overvoltages caused by inductive load switching, lightning strikes, or grid instability, thereby improving the overall reliability and lifespan of the power converter.

What is the practical impact of the extremely low Rth(j-c) of 0.02 °C/W on my thermal design?

This low Thermal Resistance directly translates to a lower junction temperature for a given amount of power dissipation. This allows engineers to either use a smaller, more cost-effective heatsink for the same operating current, or to push more power through the module while staying within thermal limits. Ultimately, it leads to a more compact, reliable, and potentially lower-cost thermal management solution.

Is the 1000PT18C0 suitable for paralleling to achieve higher current output?

Yes, the module is well-suited for parallel operation. Its NPT-IGBT technology provides a positive temperature coefficient for VCE(sat). This means that as a chip heats up, its on-state voltage increases, which naturally helps to balance current sharing between parallel-connected modules without requiring complex external circuitry. This characteristic simplifies the design of very high-power inverter stages.

Request for Information

For detailed technical inquiries, application support, or to request further documentation on the 1000PT18C0 IGBT module, please contact our technical sales team for expert assistance in your power system design.