Nell 1000PT18C0 IGBT Module

FEATURES

. Center amplifying gate

. Metal case with ceramic insulator

. lnternational standard case TO-200AC (B-PUK) Nell’s C-type Capsule

. Compliant to RoHS

. Designed and qualified for industrial level

TYPICAL APPLICATIONS

. DC motor controls

. Controlled DC power supplies

. AC controllers

FORWARD CONDUCTION

Maximum average currentat heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 1000A

Maximum RMS on-state current IT(RM) DC at 25°C heatsink temperature double side cooled 2020A

Maximum critical rate of rise ofoff-state voltage dV/dtT =T maximum linear to 80% ratedV J JDRM 500V/μs

Maximum peak reverse andoff-state leakage currentlDRM,T =T maximum, ratedV/Vapplied 80 mA

Maximum peak gate power PGM T = T maximum, t ≤ 5 ms 10W

Maximum average gate power PG(AV) T = T maximum, f = 50 Hz, d% = 50 2W

Maximum peak positive gate current IGM T = T maximum, t ≤ 5 ms 3 A

Maximum peak positive gate voltage +VGM T = T maximum, t ≤ 5 ms 20V

Maximum peak negative gate voltage -VGM T = T maximum, t ≤ 5 ms 5 V

Maximum operating junction temperature range TJ -40 to +125°C

Maximum storage temperature range Tstg -40 to +150°C

Mounting force,±10% 14700 N(kg)

Approximate weight 255 g

Case style TO-200AC (B-PUK), Nell’s C-type Capsule