Nell 1000PT18C0 IGBT Module

FEATURES
. Center amplifying gate
. Metal case with ceramic insulator
. lnternational standard case TO-200AC (B-PUK) Nell’s C-type Capsule
. Compliant to RoHS
. Designed and qualified for industrial level
TYPICAL APPLICATIONS
. DC motor controls
. Controlled DC power supplies
. AC controllers
FORWARD CONDUCTION
Maximum average currentat heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 1000A
Maximum RMS on-state current IT(RM) DC at 25°C heatsink temperature double side cooled 2020A
Maximum critical rate of rise ofoff-state voltage dV/dtT =T maximum linear to 80% ratedV J JDRM 500V/μs
Maximum peak reverse andoff-state leakage currentlDRM,T =T maximum, ratedV/Vapplied 80 mA
Maximum peak gate power PGM T = T maximum, t ≤ 5 ms 10W
Maximum average gate power PG(AV) T = T maximum, f = 50 Hz, d% = 50 2W
Maximum peak positive gate current IGM T = T maximum, t ≤ 5 ms 3 A
Maximum peak positive gate voltage +VGM T = T maximum, t ≤ 5 ms 20V
Maximum peak negative gate voltage -VGM T = T maximum, t ≤ 5 ms 5 V
Maximum operating junction temperature range TJ -40 to +125°C
Maximum storage temperature range Tstg -40 to +150°C
Mounting force,±10% 14700 N(kg)
Approximate weight 255 g
Case style TO-200AC (B-PUK), Nell’s C-type Capsule