#Fuji, #1DI300M_050, #IGBT_Module, #IGBT, 1DI300M-050 Power Bipolar Transistor, 300A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, M109, 5 PIN; 1DI300M-050
Manufacturer Part Number: 1DI300M-050Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-XUFM-X5Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 600 VConfiguration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 3000JESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 300A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, M109, 5 PIN