Fuji 1DI75H-120 IGBT Module

Manufacturer Part Number: 1DI75H-120
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Package Description: FLANGE MOUNT, R-PUFM-X7
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.84
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE): 70
JESD-30 Code: R-PUFM-X7
Number of Elements: 1
Number of Terminals: 7
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: NPN
Power Dissipation Ambient-Max: 500 W
Power Dissipation-Max (Abs): 500 W
Qualification Status: Not Qualified
Subcategory: Other Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: CHOPPER
Transistor Element Material: SILICON
Turn-off Time-Max (toff): 18000 ns
Turn-on Time-Max (ton): 3000 ns
Power Bipolar Transistor, 75A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin