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Fuji 1DI75H-120

  • 1DI75H-120
  • 1DI75H-120 Power Bipolar Transistor, 75A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

    · Categories: IGBT
    · Manufacturer: Fuji
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 4101
    MOQ: 1 PC
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    Content last revised on September 10, 2026

    Manufacturer Part Number: 1DI75H-120
    Ihs Manufacturer: FUJI ELECTRIC CO LTD
    Package Description: FLANGE MOUNT, R-PUFM-X7
    Manufacturer: Fuji Electric Co Ltd
    Risk Rank: 5.84
    Collector Current-Max (IC): 75 A
    Collector-Emitter Voltage-Max: 1200 V
    Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
    DC Current Gain-Min (hFE): 70
    JESD-30 Code: R-PUFM-X7
    Number of Elements: 1
    Number of Terminals: 7
    Package Body Material: PLASTIC/EPOXY
    Package Shape: RECTANGULAR
    Package Style: FLANGE MOUNT
    Polarity/Channel Type: NPN
    Power Dissipation Ambient-Max: 500 W
    Power Dissipation-Max (Abs): 500 W
    Qualification Status: Not Qualified
    Subcategory: Other Transistors
    Surface Mount: NO
    Terminal Form: UNSPECIFIED
    Terminal Position: UPPER
    Transistor Application: CHOPPER
    Transistor Element Material: SILICON
    Turn-off Time-Max (toff): 18000 ns
    Turn-on Time-Max (ton): 3000 ns
    Power Bipolar Transistor, 75A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

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