Content last revised on November 22, 2025
6MBI50S-120-52 | Fuji 1200V 50A S-Series 6-Pack IGBT Module
Product Overview: Efficiency and Reliability in a Compact Form Factor
A Deep Dive into the 6MBI50S-120-52 IGBT Module
The Fuji Electric 6MBI50S-120-52 is a 1200V, 50A 6-pack IGBT engineered for thermally stable and efficient power conversion in compact industrial systems. This module integrates a full three-phase inverter bridge into a single, optimized package, offering key specifications of 1200V Collector-Emitter Voltage, 50A continuous Collector Current, and a per-IGBT thermal resistance (junction-to-case) of 0.50°C/W. The primary engineering benefits are a significantly simplified three-phase design and predictable thermal performance under demanding load cycles. This module provides a complete inverter stage, making it an ideal building block for compact and reliable motor control systems. For power conversion applications up to 22kW where reliable thermal management and design simplicity are primary engineering goals, the 6MBI50S-120-52 presents a robust solution.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The technical specifications of the 6MBI50S-120-52 are tailored for high-performance switching applications. The parameters below are grouped by function to facilitate engineering evaluation. A comprehensive understanding of these values is essential for optimizing system design and ensuring long-term operational reliability. For a complete dataset, including characteristic curves and application notes, please refer to the official documentation.
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage | V_CES | 1200 | V |
| Continuous Collector Current (Tc=80°C) | I_C | 50 | A |
| 1ms Pulse Collector Current | I_CP | 100 | A |
| Max Power Dissipation (per IGBT) | P_C | 250 | W |
| Electrical Characteristics (IGBT Inverter Part) | |||
| Collector-Emitter Saturation Voltage (Tj=125°C, I_C=50A) | V_CE(sat) | 2.8 (Max) | V |
| Gate-Emitter Threshold Voltage | V_GE(th) | 5.0 to 8.0 | V |
| Thermal Characteristics | |||
| Thermal Resistance (Junction to Case, per IGBT) | Rth(j-c) | 0.50 | °C/W |
| Operating Junction Temperature | T_j | -40 to +150 | °C |
Download the 6MBI50S-120-52 datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Power Conversion
The 6MBI50S-120-52 is engineered for applications where power density, efficiency, and reliability are paramount. Its integrated 6-pack configuration makes it a primary choice for designers of compact, high-performance systems.
- Variable Frequency Drives (VFDs): In small to medium-sized VFDs for industrial motors, space within the control cabinet is often limited. The high integration of this module reduces the overall footprint and simplifies the power stage layout. The defined thermal resistance allows for precise heatsink design, crucial for maintaining reliability in enclosed, fan-cooled, or convection-cooled environments.
- Servo Drives: The fast and efficient switching characteristics of the module are well-suited for high-precision servo drives used in robotics and CNC machinery, enabling accurate motor control and dynamic response.
- Uninterruptible Power Supplies (UPS): In commercial and industrial UPS systems, the module's 1200V rating provides a substantial safety margin, while its efficiency helps reduce cooling requirements and operating costs.
- General Purpose Inverters: The module serves as a robust foundation for various power conversion tasks, including solar inverters and welding power supplies, where a reliable three-phase output is required.
What is the primary benefit of its integrated design? Simplified assembly and reduced stray inductance for improved electrical performance. While this module is ideal for 50A applications, for systems requiring higher current handling, the related 6MBI100S-120-52 offers double the current capacity in a similar package footprint.
Technical Deep Dive
A Closer Look at Thermal Performance and Conduction Losses
Two key parameters dictate the in-circuit performance and reliability of the 6MBI50S-120-52: its thermal resistance and saturation voltage. The Rth(j-c) of 0.50 °C/W is a direct measure of how effectively heat can be transferred from the active silicon chip to the module's case. Think of this value as the width of a pipe; a lower number signifies a wider pipe, allowing more heat (water) to flow away from the junction easily. This efficiency in heat transfer is fundamental to keeping the IGBTs within their safe operating temperature, directly impacting the system's longevity. For a deeper dive into this topic, explore this guide on mastering IGBT thermal management.
Simultaneously, the maximum V_CE(sat) of 2.8V at full load and operating temperature defines the module's conduction losses. This voltage can be conceptualized as electrical "friction." As current flows through the active switch, V_CE(sat) represents the voltage drop that is converted directly into heat. A lower V_CE(sat) means less friction and, consequently, less wasted energy and lower heat generation. The balance Fuji Electric has achieved between switching speed and this low conduction loss makes the S-Series a workhorse for many Variable Frequency Drive (VFD) applications.
Industry Insights & Strategic Advantage
Enabling Power Density in Modern Industrial Automation
The design of the 6MBI50S-120-52 aligns directly with major trends in industrial automation: decentralization and increased energy efficiency. As factories and processes become more intelligent, there is a growing need for smaller, more efficient motor drives that can be placed closer to the point of use. This module's compact, all-in-one design supports this shift by providing the power density required to build smaller drive systems without compromising on performance or reliability. This integration is crucial for systems designed to meet safety and performance standards such as IEC 61800-5. By minimizing parasitic inductance and simplifying thermal design, this module from Fuji Electric helps engineers develop next-generation drive solutions that are not only smaller but also more energy-efficient, contributing to reduced operational expenditures and a lower carbon footprint.
Frequently Asked Questions (FAQ)
How does the specified Rth(j-c) of 0.50 °C/W influence the thermal design of a system using the 6MBI50S-120-52?
A lower Rth(j-c) value enables more efficient heat extraction from the IGBT junction to the case. This directly allows for the selection of a smaller, more cost-effective heatsink for a given power dissipation. Alternatively, for a fixed heatsink size, it provides a greater thermal margin, enhancing system reliability and allowing for operation in higher ambient temperatures. This is a critical factor for achieving high power density in enclosed systems. For further reading, our guide on decoding IGBT datasheets offers more context.
What is the significance of the 6-in-1 'PIM' configuration for a power electronics designer?
What is the key advantage of a 6-in-1 module? It dramatically simplifies the manufacturing and design process. A 6-in-1 Power Integrated Module (PIM) consolidates a full three-phase inverter bridge (six IGBTs and six freewheeling diodes) into a single component. This reduces the number of components to be mounted, minimizes complex busbar or PCB trace layouts, and lowers stray inductance between switches, which can lead to better EMI performance and reduced voltage overshoots during switching.
To further evaluate if the 6MBI50S-120-52 meets the specific requirements of your application, please review the detailed datasheet and consult with our technical support for procurement inquiries.
