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Fuji 1MBI600LP-060 IGBT Module

Fuji Electric 1MBI600LP-060: 600V/600A IGBT with Trench FS tech. Delivers ultra-low VCE(sat) for maximum efficiency and reliability in demanding power systems.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 45
· Date Code: 2022+
. Available Qty: 67
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1MBI600LP-060 Specification

Fuji Electric 1MBI600LP-060 | High-Current 600V IGBT for Demanding Power Conversion

The Fuji Electric 1MBI600LP-060 is a high-performance 600V, 600A single IGBT module engineered for high-power industrial applications where efficiency, thermal stability, and reliability are non-negotiable. This module leverages Fuji's advanced trench gate and field-stop (FS) technology to deliver an optimized balance between low conduction losses and fast switching speeds, making it a cornerstone component for modern power conversion systems.

Key Technical Specifications

Engineered for robust performance, the 1MBI600LP-060 provides a solid foundation for high-reliability power stages. Below are the critical parameters for design consideration. For complete specifications, please refer to the official datasheet. Download the Fuji Electric 1MBI600LP-060 Datasheet.

ParameterValue
Collector-Emitter Voltage (VCES)600 V
Continuous Collector Current (IC) at TC=80°C600 A
Collector-Emitter Saturation Voltage (VCE(sat)) typ. at IC=600A1.7 V
Total Power Dissipation (PC)2500 W
Short-Circuit Withstand Time (tsc)10 µs
Operating Junction Temperature (Tvj op)-40 to +150 °C

Technical Deep Dive: Balancing Conduction and Switching Performance

The core of the Fuji 1MBI600LP-060 lies in its meticulously engineered silicon. By employing a sophisticated Trench Field-Stop (FS) IGBT structure, this module achieves a very low collector-emitter saturation voltage (VCE(sat)) of 1.7V at its nominal current. This characteristic is critical for engineers as it directly translates to lower conduction losses during the on-state, which is the dominant loss factor in high-current, lower-frequency applications. The direct benefit is reduced heat generation, allowing for more compact heatsink designs and improved overall system efficiency.

Simultaneously, the FS layer optimizes the turn-off characteristics. It effectively curtails the "tail current" that plagues older IGBT technologies, resulting in significantly lower turn-off energy loss (Eoff). This enables the module to operate at higher switching frequencies without incurring excessive thermal stress, a key requirement for achieving higher power density and improved dynamic response in modern converters.

Application Scenarios & Engineering Value

The robust electrical and thermal characteristics of the 1MBI600LP-060 make it an ideal choice for several demanding applications:

  • High-Power Motor Drives: In large-scale Variable Frequency Drives (VFDs) for industrial motors, the module's high current handling and excellent thermal stability ensure reliable torque delivery under heavy load conditions. Its low VCE(sat) minimizes energy waste, directly contributing to lower operational costs over the system's lifetime.
  • Uninterruptible Power Supplies (UPS): For data centers and critical infrastructure, the module's proven reliability and fast switching capabilities are essential for building high-efficiency inverters that can respond instantaneously to power outages, ensuring seamless power delivery.
  • Industrial Welding Power Supplies: The module's ability to handle high pulse currents and its robust Safe Operating Area (SOA) make it perfectly suited for the harsh electrical environment of industrial welding, enabling precise control over the welding arc for high-quality results.

Frequently Asked Questions (FAQ)

1. What are the key considerations for the gate drive design for the 1MBI600LP-060?

To fully leverage the module's performance, a robust gate drive circuit is essential. We recommend a gate voltage of +15V for turn-on and a negative voltage of -8V to -15V for turn-off to ensure immunity against parasitic turn-on induced by the Miller effect, especially during fast dV/dt transitions. A dedicated gate resistor (RG) must be selected to balance switching speed and voltage overshoot. For further guidance, explore these 5 practical tips for robust IGBT gate drive design.

2. How does the thermal interface of this module contribute to reliability?

The 1MBI600LP-060 is housed in a standard industrial package with a flat, copper baseplate designed for optimal thermal contact with a heatsink. Achieving low thermal resistance between the module case and the heatsink is paramount for long-term reliability. Proper application of a high-quality thermal interface material (TIM) and correct mounting torque are critical to prevent localized hotspots and subsequent IGBT failure due to overtemperature.

For detailed application notes or to discuss how this module can fit into your specific design, please contact our technical team for expert support.

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