#IR, #243NQ045, #IGBT_Module, #IGBT, 243NQ045 Silicon ROHS COMPLIANT 25A/45V/5µs Sine or 3µs Rect;
Description/Features The 243NQ045 high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. . 175° C TJ operation . Unique high power, Half-Pak module . Replaces four parallel DO-5's . Easier to mount and lower profile than DO-5's . High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance . Low forward voltage drop . High frequency operation . Guard ring for enhanced ruggedness and long term reliability F(AV) Rectangular waveform 240 A VRRM range 45 V IFSM @ tp = 5 µs sine 25,500 A VF @240Apk, TJ=125°C 0.72 V TJ range - 55 to 175 °C TJ Max. Junction Temperature Range -55 to 175 °C Tstg Max. Storage Temperature Range -55 to 175 °C RthJC Max. Thermal Resistance Junction to Case 0.20 °C/W DC operation * See Fig. 4 RthCS Typical Thermal Resistance, Case to Heatsink 0.15 °C/W Mounting surface , smooth and greased Wt Approximate Weight 25.6g Silicon ROHS COMPLIANT 25A/45V/5µs Sine or 3µs Rect