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Fuji 2MBI150U4H-170 IGBT Module

2MBI150U4H-170

2MBI150U4H-170 FUJI Insulated Gate Bipolar Transistor, 150A 1700V

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$
· Date Code: 2024+
. Available Qty: 3524
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2MBI150U4H-170 Specification

Applicable category
This specification is applied to IGBT Module named 2MBI150U4H-170.
. The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75%.
.Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
Storage and transportation notes
. Avoid exposure to corrosive gases and dust.
. Avoid excessive external force on the module.
. Store modules with unprocessed terminals.
. Do not drop or otherwise shock the modules when transporting.

Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :300A
Collector power dissipation Pc:780W
Isolation Voltage VIsol (AC 1 minute) :3400V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *2 N·m

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