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Fuji 2MBI150U4H-120

  • 2MBI150U4H-120
  • 2MBI150U4H-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V N-Channel, MODULE-7

    · Categories: IGBT
    · Manufacturer: Fuji
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 936
    90-Day Warranty
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    Whatsapp: 0086 189 2465 1869

    Content last revised on December 12, 2024

    Features
    High speed switching
    Voltage drive
    Low Inductance module structure
    Applications
    Inverter for Motor Drive
    AC and DC Servo Drive Amplifier
    Uninterruptible Power Supply
    Industrial machines, such as Welding machines
    Maximum ratings and characteristics
    .Absolute maximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:1200V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :200A
    Collector current Icp 1ms Tc=25°C :400A
    Collector current Ic Continuous Tc=80°C :150A
    Collector current Icp 1ms Tc=80°C :300A
    Collector power dissipation Pc:780W
    Isolation Voltage VIsol (AC 1 minute) :2500V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C
    Mounting screw torque 3.5 *2 N·m

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