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Fuji 2MBI150U4H-120

  • 2MBI150U4H-120

2MBI150U4H-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V N-Channel, MODULE-7

· Categories: IGBT
· Manufacturer: Fuji
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 936
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Content last revised on December 12, 2024

Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector current Ic Continuous Tc=80°C :150A
Collector current Icp 1ms Tc=80°C :300A
Collector power dissipation Pc:780W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *2 N·m

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