2MBI200VH-170-50 Fuji Electric 1700V 200A Dual IGBT Module

2MBI200VH-170-50 IGBT Module In-stock / Fuji Electric: 1700V 200A, featuring high-speed V-series technology. 90-day warranty, for high-frequency inverters. Global fast shipping. Check stock online.

· Categories: IGBT
· Manufacturer: FUJI
· Price: US$
· Date Code: 2024+
. Available Qty: 460
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Content last revised on November 26, 2025

2MBI200VH-170-50: A Deep Dive into a High-Speed 1700V IGBT Module

The 2MBI200VH-170-50 from Fuji Electric is a high-performance dual IGBT module from their V-series, engineered to meet the stringent demands of modern high-frequency power conversion systems. With core specifications of 1700V and 200A, this module provides a robust solution for enhancing system efficiency and reliability. Its key benefits include significantly reduced switching losses and superior thermal performance, which are critical for power-dense applications. This module is specifically designed to address the engineering challenge of balancing high-voltage operation with high-speed switching, making it a pivotal component for next-generation inverters and servo drives. For systems where operational efficiency and reliability in high voltage environments are non-negotiable, the 2MBI200VH-170-50's V-series technology provides a decisive advantage.

Key Parameter Overview

Analyzing the Electrical and Thermal Specs for High-Frequency Designs

The technical specifications of the 2MBI200VH-170-50 are foundational to its performance in demanding applications. The parameters outlined below have been selected to provide engineers with the critical data needed for system design, thermal modeling, and performance optimization. Each value is a direct reflection of the module's capability to handle high voltage and current while maintaining operational stability and efficiency.

Parameter Symbol Value Conditions
Collector-Emitter Voltage VCES 1700V -
Continuous Collector Current IC 200A TC=100°C
Collector-Emitter Saturation Voltage VCE(sat) 2.55V (typ.) IC=200A, Tj=125°C
Maximum Junction Temperature Tj max 175°C -
Thermal Resistance (IGBT) Rth(j-c) 0.120°C/W Per device
Turn-off Time toff 1050 ns (typ.) IC=200A, Tj=150°C

Download the 2MBI200VH-170-50 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Enabling Higher Efficiency and Power Density in Industrial Converters

The 2MBI200VH-170-50 is engineered for high-stakes applications where performance cannot be compromised. Its combination of a 1700V breakdown voltage and fast switching characteristics makes it an optimal choice for systems operating on higher voltage buses, such as those found in heavy industrial settings.

A primary engineering scenario for this module is in high-power Variable Frequency Drives (VFDs) connected to 690V AC industrial lines. In these systems, a high blocking voltage is not just a recommendation but a necessity for ensuring a sufficient safety margin against voltage spikes and transients common in industrial grids. The 1700V rating of this IGBT provides that critical headroom, enhancing long-term system reliability. Furthermore, the module's fast switching capabilities, a hallmark of Fuji's V-series, allow for higher PWM frequencies. This directly translates to reduced motor current ripple, lower audible noise, and the potential to use smaller, more cost-effective output filters. The efficient heat dissipation, indicated by a low thermal resistance of 0.120°C/W, is crucial for maintaining performance in enclosed, space-constrained VFD cabinets. For applications demanding even greater current handling within the same voltage class, designers might consider the 2MBI300VH-170, which offers a higher current rating in a similar package.

Technical Deep Dive

A Closer Look at V-Series Technology for Reduced Switching Losses

The "VH" designation in the 2MBI200VH-170-50 signifies its inclusion in Fuji Electric's high-speed V-series, which is optimized to minimize the trade-off between conduction and switching losses. This is achieved through advanced chip-level engineering, combining a trench gate structure with a refined field-stop layer. This design allows the module to turn on and off more quickly and cleanly, significantly reducing the energy dissipated during each switching event (Eon and Eoff).

To understand the impact, consider switching losses like the water wasted when turning a traditional faucet. A slow-turning faucet wastes water both as it opens and as it closes. Similarly, an older-generation IGBT wastes energy during its turn-on and turn-off transitions. The V-series technology is analogous to a modern quarter-turn ball valve; it snaps open and closed almost instantaneously, minimizing the transition time and thus the "leaked" or wasted energy. This reduction in switching losses is paramount in applications like high-frequency solar inverters and uninterruptible power supplies (UPS), where every percentage point of efficiency contributes to lower operating costs and reduced thermal load. Effective thermal management is still key, but starting with a more efficient switch simplifies the entire cooling system design.

Frequently Asked Questions

Engineering Inquiries on the 2MBI200VH-170-50's Performance

How does the 1700V rating of the 2MBI200VH-170-50 directly benefit designs for 690V AC industrial systems?

The 1700V rating provides a crucial safety margin. For a 690V AC line, the peak DC bus voltage can approach 1000V. The 1700V VCES ensures robust protection against voltage overshoots and transients caused by line fluctuations or inductive load switching, significantly improving the system's long-term reliability and preventing catastrophic failures.

What is the primary benefit of this module's V-series high-speed switching capability?

Its primary benefit is reduced switching losses, which enables higher operational frequencies. This leads to more compact system designs (due to smaller passive components), improved control resolution in motor drives, and higher overall inverter efficiency.

With a typical VCE(sat) of 2.55V at 125°C, how does this impact thermal design?

A VCE(sat) of 2.55V at operating temperature is a key parameter for calculating conduction losses (Pcond = VCE(sat) * IC). This predictable value allows engineers to accurately model the heat generated by the module under load, enabling precise heatsink selection and ensuring the junction temperature remains within its safe operating area, even in compact or high-ambient-temperature environments.

Can the 2MBI200VH-170-50 be used in parallel to achieve higher current output?

Yes, but it requires careful design considerations. For successful IGBT paralleling, it is critical to ensure symmetrical layout, matched gate drive circuits, and thermal balancing to promote even current sharing. The positive temperature coefficient of VCE(sat) in IGBTs like this one provides a degree of self-balancing, but dedicated engineering effort is essential for reliable operation.

From a strategic perspective, integrating the 2MBI200VH-170-50 into new designs is an investment in future-proofing. As energy efficiency standards become more stringent and power density requirements increase, components that minimize losses while providing robust high-voltage performance are no longer optional but essential. This module equips engineering teams to build systems that are not only competitive today but also compliant and performant for the lifecycle of the application.

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