#Microsemi Corporation , #2N3057A, #IGBT_Module, #IGBT, 2N3057A Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN; 2N3057A
Manufacturer Part Number: 2N3057APbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: BCYPackage Description: CYLINDRICAL, O-MBCY-W3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Microsemi CorporationRisk Rank: 5.18Collector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 80 VConfiguration: SINGLEDC Current Gain-Min (hFE): 15JEDEC-95 Code: TO-206ABJESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: WIRETerminal Position: BOTTOMTime Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN