Mitsubishi RM500UZ-H | High-Power 1200V/500A Chopper IGBT for Demanding Industrial Applications
The Mitsubishi RM500UZ-H is a high-current, single-switch IGBT module engineered for robust performance in the most demanding power conversion systems. As a cornerstone component for high-power industrial applications, this module combines a formidable 1200V blocking voltage with a 500A current rating, delivering reliability and power density in a single, well-established package. It is specifically designed for engineers building systems that require uncompromising control over massive power loads, where durability and thermal stability are paramount.
Key Technical Specifications at a Glance
Engineers require precise data for design and simulation. The following table highlights the critical performance parameters of the RM500UZ-H, which define its capabilities in high-stress environments. For a complete dataset, including characteristic curves and thermal information, download the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200V |
| Continuous Collector Current (IC) @ TC=25°C | 500A |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=500A | 2.7V (typ.) |
| Total Power Dissipation (PC) | 3120W |
| Operating Junction Temperature (Tj) | -40°C to +150°C |
| Short-Circuit Withstand Time (tsc) | 10µs |
Engineered for High-Stress Application Environments
The true value of the Mitsubishi RM500UZ-H lies not just in its raw specifications, but in its suitability for specific, challenging industrial roles. Its single-switch "chopper" topology offers design simplicity and ruggedness where a more complex half-bridge or six-pack configuration is unnecessary. This makes it an ideal choice for:
- Dynamic Braking Choppers: In high-power Variable Frequency Drives (VFDs) and servo systems, this module can reliably switch a braking resistor to dissipate immense regenerative energy from a decelerating motor. This prevents DC bus overvoltage, protecting the entire drive system from catastrophic failure.
- Industrial Welding Power Supplies: The pulsed, high-current nature of welding demands components with an excellent Safe Operating Area (SOA). The RM500UZ-H is built to withstand these repeated current surges, providing the stable power delivery needed for high-quality welds.
- High-Power DC-DC Converters: For applications like large-scale battery charging systems, electrolysis, or renewable energy power stages, this module serves as a robust and efficient primary switching element in boost or buck converter designs.
- Induction Heating Systems: Its ability to handle high currents at moderate frequencies makes the RM500UZ-H a workhorse component in the resonant tank circuits of industrial induction heating equipment.
Technical Deep Dive: The Engineering Behind the Reliability
The robust performance of the Mitsubishi RM500UZ-H is a direct result of proven silicon technology and intelligent package design. While not featuring the latest generation's ultra-low VCE(sat), its design is optimized for ruggedness and thermal efficiency, which are often more critical in its target applications. The module's excellent thermal performance is central to its reliability. The large, electrically isolated baseplate provides a low thermal resistance path to the heatsink, ensuring that the heat generated during high-current operation is efficiently evacuated. Understanding and optimizing this thermal path is key to unlocking the module's full potential, a concept further explored in our guide on unlocking IGBT thermal performance.
Frequently Asked Questions (FAQ)
What are the primary considerations when designing a gate drive for the RM500UZ-H?
Due to its 500A rating, the RM500UZ-H has a significant gate charge (QG). A robust gate drive circuit is non-negotiable. Key considerations include: providing sufficient peak gate current (both for sourcing and sinking) to ensure rapid and clean switching, a stable gate voltage (typically +15V/-10V) to prevent spurious turn-on and ensure full enhancement, and minimizing inductance in the gate-emitter loop to prevent voltage overshoot and ringing. For further guidance, review our practical tips for robust gate drive design.
Can the RM500UZ-H be paralleled for higher current applications?
Yes, it is possible to parallel these modules, but it requires careful engineering. To ensure proper current sharing, designers must pay close attention to symmetrical PCB layout, use gate resistors for each module to dampen oscillations, and ensure tight thermal coupling between the paralleled devices. Mismatches in VCE(sat) can lead to unequal current distribution, so it's advisable to use modules from the same manufacturing batch if possible.
