Fuji 2MBI150NC-120 | Robust 1200V Dual IGBT for High-Reliability Power Conversion
The Fuji 2MBI150NC-120 is an industry-standard 1200V, 150A dual IGBT module engineered for demanding power conversion applications where reliability and thermal performance are non-negotiable. Housed in a compact, isolated package, this module provides a robust building block for inverters, motor drives, and power supplies, offering a finely tuned balance between conduction efficiency and switching ruggedness.
Key Performance Highlights
- Voltage and Current Rating: Engineered for high-power systems with a 1200V collector-emitter voltage (Vces) and a 150A continuous collector current (Ic).
- Half-Bridge Configuration: Features two IGBTs in a half-bridge (2-in-1) configuration, simplifying inverter leg design and reducing component count.
- Low Conduction Loss: Utilizes Fuji Electric's advanced Trench Gate and Field-Stop (FS) technology to achieve a low saturation voltage (Vce(sat)), directly translating to reduced heat generation and higher system efficiency.
- High Thermal Stability: Built with a high-conductivity copper baseplate and AlN substrate, ensuring excellent thermal transfer and long-term reliability under demanding power cycling conditions.
Key Parameter Overview for System Designers
The following table outlines the critical electrical and thermal characteristics that are essential for circuit simulation and thermal management design. These parameters define the operational boundaries and performance of the 2MBI150NC-120.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic) at Tc=80°C | 150 A |
| Collector-Emitter Saturation Voltage (Vce(sat)) typ. at Ic=150A, Tj=125°C | 1.90 V |
| Total Power Dissipation per IGBT (Pc) | 960 W |
| Maximum Junction Temperature (Tjmax) | 150 °C |
| Short-Circuit Withstand Time (tsc) | 10 µs |
Technical Deep Dive: Engineering for Efficiency and Durability
The performance of the 2MBI150NC-120 is rooted in two core technological advancements from Fuji Electric. Understanding these is key to leveraging the module's full potential.
First is the **Trench Gate and Field-Stop (FS) structure**. Unlike older planar IGBTs, the trench gate architecture creates a vertical current path, significantly increasing cell density. This dramatically lowers the on-state resistance, resulting in a very low VCE(sat). For the design engineer, this means less power wasted as heat during conduction, which allows for smaller heatsinks or higher current handling in a given thermal envelope. For a deeper understanding of this crucial parameter, explore our guide on IGBT selection beyond Vce(sat).
Second is the co-packaged **Fast Recovery Diode (FWD)**. In inductive load applications like motor control, the performance of this diode is as critical as the IGBT itself. The FWD in this module is optimized for soft recovery characteristics. This "softness" mitigates the high-frequency voltage oscillations and electromagnetic interference (EMI) that can occur during diode turn-off, reducing the need for complex and costly snubber circuits and simplifying regulatory compliance.
Optimized Application Scenarios
The specific characteristics of the 2MBI150NC-120 make it an ideal solution for several key industrial applications:
- Industrial Motor Drives (VFDs): In variable frequency drives, its low Vce(sat) minimizes losses at lower motor speeds, while its robust Safe Operating Area (SOA) ensures reliability during torque boosts and regenerative braking events. This module is a workhorse for AC servo and general-purpose inverters.
- Uninterruptible Power Supplies (UPS): For online double-conversion UPS systems, efficiency and reliability are paramount. The module's low conduction losses contribute to a higher overall system efficiency, reducing operating costs and thermal load in data centers and critical facilities.
- Welding and Induction Heating: These applications demand components that can withstand high-current pulses and potential short-circuit conditions. The module's specified 10µs short-circuit withstand time and rugged construction provide the necessary durability for high-frequency resonant inverters used in welding and heating.
Frequently Asked Engineer Questions (FAQ)
Q1: What are the primary considerations for designing a gate drive circuit for the 2MBI150NC-120?
A gate drive circuit should provide a stable +15V for turn-on and a negative voltage (typically -5V to -15V) for turn-off to ensure immunity against dV/dt induced turn-on. A low-inductance layout between the driver and the module is critical. We recommend reviewing these 5 practical tips for robust IGBT gate drive design to prevent common failure modes.
Q2: Can this module be used in a high-frequency (e.g., >20 kHz) application?
While the 2MBI150NC-120 is capable of switching at higher frequencies, its performance is optimized for the sub-20 kHz range typical of motor drives and UPS systems. In this range, its low conduction losses provide a significant efficiency advantage. For applications above 20 kHz, switching losses (Eon, Eoff) become the dominant factor, and a newer-generation IGBT or a SiC module may offer better overall performance.
For expert guidance on selecting the right component for your specific power conversion challenge, or to request a quote for the Fuji 2MBI150NC-120, please contact our technical team.
