#Microsemi Corporation , #2N3486A, #IGBT_Module, #IGBT, 2N3486A Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46,; 2N3486A
Manufacturer Part Number: 2N3486APbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: BCYPackage Description: CYLINDRICAL, O-MBCY-W3Pin Count: 3ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.14Collector Current-Max (IC): 0.6 ACollector-Emitter Voltage-Max: 60 VConfiguration: SINGLEDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-46JESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.4 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: WIRETerminal Position: BOTTOMTime Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46,