Sell MITSUBISHI CM75DU-12F New Stock

CM75DU-12F POWEREX CM75DU-12F IGBT Array & Module Transistor, N Channel, 75 A, 600 V, 290 W, 600 V, Module; CM75DU-12F
  • Part Number:    

    CM75DU-12F

  • Category:    

    IGBT Module

  • Manufacturer:    

    MITSUBISHI

  • Packaging:    

    IGBT module

  • Data Code:    

    2014+

  • Qty Available:    

    215

Email us: sales@shunlongwei.com
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The CM75DU-12F is a 600V Dual IGBTMOD™ Trench Gate Design Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Low drive power Low Vce (sat) Discrete super-fast recovery free-wheel diode Isolated baseplate for easy heat sinking
MITSUBISHI CM75DU-12F New POWEREX CM75DU-12F IGBT Array & Module Transistor, N Channel, 75 A, 600 V, 290 W, 600 V, Module, CM75DU-12F pictures, CM75DU-12F price, CM75DU-12F supplier
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  • Collector Emitter Voltage V(br)ceo: 600V
  • Collector Emitter Voltage Vces: 600V
  • DC Collector Current: 75A
  • No. of Pins: 7
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 290W
  • SVHC: To Be Advised
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

POWEREX CM75DU-12F IGBT Array & Module Transistor, N Channel, 75 A, 600 V, 290 W, 600 V, Module

Shunlongwei Inspected every CM75DU-12F before Ship, All CM75DU-12F with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng

Tel:+86-755-82732562

E-mail: sales@shunlongwei.com

ADD:Rom512,Bldg#505, Shangbu Industrial Area, Huaqiang North Rd., SZ,518000,China.