Mitsubishi CM150DU-24F | A Robust 1200V Dual IGBT Module for High-Reliability Power Conversion
The Mitsubishi CM150DU-24F is an industry-proven dual IGBT module engineered for durability and consistent performance in demanding power electronics applications. It represents a class of components where ruggedness and operational reliability are prioritized, making it a cornerstone for systems requiring long service life under challenging electrical conditions.
Core Features for the Design Engineer
- Voltage and Current Rating: 1200V Collector-Emitter Voltage (Vces) and 150A Collector Current (Ic), providing substantial headroom for medium-power applications.
- Dual IGBT Configuration: Features a half-bridge (2-in-1) topology, simplifying the design of inverter legs and reducing component count in three-phase systems.
- Exceptional Robustness: Engineered with a high short-circuit withstand time, critical for protecting against fault conditions in motor drive and industrial applications.
- Industry-Standard Package: Housed in a conventional package with a flat base, ensuring excellent thermal contact and simplifying mechanical integration and heatsink design.
Application Scenarios & Engineering Value
The CM150DU-24F excels where operational toughness is more critical than achieving the absolute lowest switching losses. Its design characteristics provide tangible benefits in specific, demanding environments.
- Variable Frequency Drives (VFDs): In industrial motor control, the module's ability to handle high inrush currents and repetitive inductive load switching is paramount. Its robust nature ensures reliability in controlling AC motors, from simple conveyors to more complex machine tools. For more on this, explore the role of IGBTs in robotic servo drives.
- Welding Power Supplies: The harsh electrical environment of a welding application demands components with a superior Safe Operating Area (SOA). The CM150DU-24F's resilience to short-circuit events makes it an ideal choice for the output stage of high-power welders.
- Uninterruptible Power Supplies (UPS): For commercial and industrial UPS systems, long-term reliability is non-negotiable. This module's proven track record and durable construction provide the confidence needed for critical backup power infrastructure.
Technical Deep Dive: The Engineering Trade-Offs
Understanding the design philosophy of the Mitsubishi CM150DU-24F is key to its effective implementation. Unlike cutting-edge IGBTs focused solely on minimizing Vce(sat), this module represents a balanced approach.
Its collector-emitter saturation voltage (Vce(sat)) of 2.7V (max) is a deliberate trade-off for achieving an impressive Short-Circuit Withstand Time of over 10 microseconds. For a design engineer, this means that in applications with a higher risk of load faults, this module offers a crucial safety margin that can prevent catastrophic failure. This focus on durability is a core element of effective IGBT failure analysis and prevention.
Key Parameter Overview
The following table provides a snapshot of the critical performance metrics for the CM150DU-24F. For comprehensive data, including characteristic curves and detailed thermal information, please Download the Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200V |
| Collector Current (IC) @ TC=80°C | 150A |
| Pulsed Collector Current (ICP) | 300A |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=150A, Tj=125°C | 2.7V (Max) |
| Maximum Junction Temperature (Tj(max)) | 150°C |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT | 0.14 °C/W (Max) |
Frequently Asked Questions (FAQ)
Our engineers frequently receive questions about deploying established modules like the CM150DU-24F in modern designs. Here are two common points.
- What are the best practices for gate driving this module?Given its chip technology generation, a robust gate drive is recommended. A positive voltage of +15V for turn-on is standard. Crucially, a negative turn-off voltage (e.g., -8V to -15V) is highly advised. This provides a strong buffer against dV/dt induced turn-on (Miller effect), enhancing system noise immunity. For detailed guidance, review these 5 practical tips for robust IGBT gate drive design.
- Is the CM150DU-24F suitable for new high-frequency designs?While this module is exceptionally reliable, its higher Vce(sat) and switching characteristics are optimized for lower to medium switching frequencies (typically under 10-15 kHz). For new designs targeting high switching frequencies (e.g., >20 kHz) to reduce the size of magnetic components, a newer generation IGBT or a SiC module would be a more suitable choice to manage switching losses. The CM150DU-24F remains the superior choice for high-power, high-reliability applications where switching frequency is not the primary driver.
For application support or to discuss whether the CM150DU-24F is the right fit for your project, please contact our technical team.
