Feature
- Patented free-floating silicon technology
- L ow on-state and switching losses
- Designed for traction, energy and industrial applications
- Optimum power handling capability
- Interdigitated amplifying gate
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:4000V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :470A
Collector current Icp 1ms Tc=25°C :740A
Collector power dissipation Pc:3W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Slope resistance rT Tj= 125°C 1.5 m Ω
Weigh 300g
