Feature
Patented free-floating silicon technology
L ow on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
- Collector-Emitter voltage Vces:5200V
- Gate-Emitter voltage VGES:±20V
- Collector current Ic Continuous Tc=25°C :440A
- On-state voltage VT IT = 500 A, Tj= 125°C 2.25 V
- Threshold voltage VT0 IT = 200 A - 1000 A, Tj= 125°C 1.2V
- Collector power dissipation Pc:3W
- Operating junction temperature Tj:+150°C
- Storage temperature Tstg :-40 to +125°C
- Slope resistance rT Tj= 125°C 1.5 m Ω
- Weigh 300g
- Recovery charge Qrr Tj = 125°C, ITRM = 1500 A,VR = 200 V, diT/dt = -5 A/μs 1300~3000μAs
- Delay timetd VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 μs 2μs
