#FUJI, #6MBI10GS_060, #IGBT_Module, #IGBT, 6MBI10GS-060 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, SIP-11; 6MBI10GS-060
Manufacturer Part Number: 6MBI10GS-060Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XSFM-P11Pin Count: 11Manufacturer: Fuji Electric Co LtdRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XSFM-P11Number of Elements: 6Number of Terminals: 11Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICON Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, SIP-11