The Toshiba MG75H2CL1 is a high-frequency, high-power insulated gate bipolar transistor (IGBT) module designed for various power electronics applications. Here's a summary of its features, applications, and specifications:
Features:
- Low VCE(sat): The module exhibits a low on-state voltage drop.
- Compact Package: It comes in a compact package.
- P.C. Board Mount: Designed for easy mounting on printed circuit boards.
- Converter Diode Bridge, Dynamic Brake Circuit: Suitable for use in converter diode bridges and dynamic brake circuits.
- Built-in Temperature Sensor: Features a built-in temperature sensor for over-temperature protection.
- Fault Detection Output Signal: Provides a fault detection output signal for fault diagnosis.
Applications:
- Inverter for Motor Drive: Used in motor control systems for variable-speed operation.
- AC and DC Servo Drive Amplifier: Used to control servo motors in precision applications.
- Uninterruptible Power Supply (UPS): Can be used to manage power supply during outages.
Absolute Maximum Ratings (Tc=25°C unless otherwise specified):
- Collector-Emitter Voltage (Vces): 600V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (Ic): 75A
- Collector Current - Pulsed (Icp): 150A
- Collector Power Dissipation (Pc): 350W
- Maximum Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 3.5 N·m
