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Toshiba MG75H2CL1 IGBT Module

#Toshiba, #MG75H2CL1, #IGBT_Module, #IGBT, MG75H2CL1 IGBT MODULE (V series)75A/600V/GTR/2U;

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 32
· Date Code: 2021+
. Available Qty: 569
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MG75H2CL1 Specification

Sell MG75H2CL1, #Toshiba #MG75H2CL1 Stock, MG75H2CL1 IGBT MODULE (V series)75A/600V/GTR/2U; , #IGBT_Module, #IGBT, #MG75H2CL1
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The Toshiba MG75H2CL1 is a high-frequency, high-power insulated gate bipolar transistor (IGBT) module designed for various power electronics applications. Here's a summary of its features, applications, and specifications:

Features:

  • Low VCE(sat): The module exhibits a low on-state voltage drop.
  • Compact Package: It comes in a compact package.
  • P.C. Board Mount: Designed for easy mounting on printed circuit boards.
  • Converter Diode Bridge, Dynamic Brake Circuit: Suitable for use in converter diode bridges and dynamic brake circuits.
  • Built-in Temperature Sensor: Features a built-in temperature sensor for over-temperature protection.
  • Fault Detection Output Signal: Provides a fault detection output signal for fault diagnosis.

Applications:

  • Inverter for Motor Drive: Used in motor control systems for variable-speed operation.
  • AC and DC Servo Drive Amplifier: Used to control servo motors in precision applications.
  • Uninterruptible Power Supply (UPS): Can be used to manage power supply during outages.

Absolute Maximum Ratings (Tc=25°C unless otherwise specified):

  • Collector-Emitter Voltage (Vces): 600V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Current (Ic): 75A
  • Collector Current - Pulsed (Icp): 150A
  • Collector Power Dissipation (Pc): 350W
  • Maximum Collector-Emitter Voltage (VCES): 2500V
  • Operating Junction Temperature (Tj): +150°C
  • Storage Temperature (Tstg): -40 to +125°C
  • Mounting Screw Torque: 3.5 N·m
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