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Fuji 6MBI450V-120-50 IGBT Module

Fuji Electric 6MBI450V-120-50: A 1200V/450A V-Series 6-pack IGBT. Engineered for low power loss and high thermal reliability in demanding inverter and motor drive applications.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 210
· Date Code: 2021+
. Available Qty: 618
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6MBI450V-120-50 Specification

6MBI450V-120-50: Technical Analysis of a High-Current 1200V IGBT Module

An Engineer's Product Page for the Fuji Electric V-Series 6-Pack Module

Content last revised on October 15, 2025.

The Fuji Electric 6MBI450V-120-50 delivers a strategic balance of high current density and optimized switching performance for demanding industrial power conversion. This 6-pack module provides a robust foundation for three-phase inverters, featuring key specifications of 1200V | 450A | VCE(sat) 1.95V (typ.). Its design yields two critical engineering benefits: significantly reduced power losses and enhanced thermal reliability. The module directly addresses the need for efficient power stages in high-current applications by integrating proven V-Series chip technology. For high-power motor drives operating up to typical PWM frequencies, this module's balanced loss profile makes it a prime candidate for achieving high system efficiency.

Key Parameter Overview

Decoding the Specs for High-Efficiency Power Stage Design

The technical specifications of the 6MBI450V-120-50 are architected for performance and durability in high-stress electrical environments. The values below, drawn directly from the official datasheet, highlight the module's capacity to minimize losses and manage thermal loads effectively, which are primary considerations in modern power electronic designs.

Parameter Symbol Condition Value
Collector-Emitter Voltage Vces 1200V
Continuous Collector Current Ic Tc = 80°C 450A
Collector-Emitter Saturation Voltage VCE(sat) Ic = 450A, VGE = 15V 1.95V (typ) / 2.50V (max)
Forward Voltage (FWD) Vf If = 450A, VGE = 0V 1.90V (typ) / 2.40V (max)
Thermal Resistance (IGBT) Rth(j-c) Junction to Case 0.056 K/W
Thermal Resistance (FWD) Rth(j-c) Junction to Case 0.083 K/W
Turn-on Switching Loss Eon Ic = 450A 120 mJ (typ)
Turn-off Switching Loss Eoff Ic = 450A 155 mJ (typ)
Operating Junction Temperature Tj +150°C

Download the 6MBI450V-120-50 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in High-Power Motor Drives and Inverters

The 6MBI450V-120-50 IGBT module is engineered for high-power, three-phase applications where efficiency and thermal stability are non-negotiable. Its robust current rating and voltage overhead make it a strong candidate for the core of various power conversion systems.

  • Industrial Motor Drives: In high-power Variable Frequency Drives (VFDs) for manufacturing, pumps, and fans, minimizing power loss is critical for reducing operational costs. The low VCE(sat) of 1.95V (typ) directly translates to lower conduction losses during operation, improving the overall efficiency of the drive and helping to meet stringent energy standards like IEC 61800-5.
  • Renewable Energy Inverters: For large-scale solar inverters and wind turbine converters, reliability and energy yield are paramount. The module's low thermal resistance (0.056 K/W) ensures efficient heat extraction, maintaining lower junction temperatures and extending the operational life of the inverter, even under fluctuating load conditions.
  • Uninterruptible Power Supplies (UPS): In data centers and critical industrial facilities, UPS systems must provide reliable power with high efficiency. The balanced switching characteristics of the V-Series chip help to reduce total power losses in the inverter stage, contributing to a lower Total Cost of Ownership (TCO).

What is the primary benefit of its low VCE(sat)? Reduced conduction losses for higher system efficiency. A key engineering challenge in these applications is managing the waste heat generated within a compact system enclosure. The module's excellent thermal resistance simplifies heatsink design; think of it as a wider pipe allowing heat to escape more easily. This enables designers to either shrink the overall system size or increase the power density without compromising long-term reliability. For systems that require a higher current rating within a similar package family, the 2MBI600XHA120-50 is an alternative to evaluate.

Frequently Asked Questions

Engineering Questions on Performance and Implementation

How does the integrated NTC thermistor in the 6MBI450V-120-50 enhance system reliability?

The built-in NTC thermistor provides a direct, real-time measurement of the module's baseplate temperature. This allows the system's controller to implement precise over-temperature protection. By monitoring this temperature, the control logic can gracefully reduce power or trigger a safe shutdown before the IGBT junction temperature exceeds its maximum limit, preventing catastrophic failure and improving the overall operational safety and lifespan of the power system.

What is the significance of the V-Series technology in terms of VCE(sat) and switching losses for a 450A motor drive?

Fuji's V-Series technology represents a carefully engineered trade-off between conduction losses (defined by VCE(sat)) and switching losses (Eon and Eoff). For a 450A motor drive operating at typical Pulse Width Modulation (PWM) frequencies (e.g., 2-15 kHz), this balance is crucial. A low VCE(sat) minimizes heat generation when the device is fully on, while optimized switching losses reduce heat during the rapid on-off transitions. This dual optimization results in higher overall inverter efficiency compared to technologies that heavily favor one characteristic over the other.

Can the 6MBI450V-120-50 be paralleled for higher current applications?

While the datasheet does not explicitly detail paralleling procedures, it is a common practice for modules of this type. Successful paralleling requires careful attention to both the static and dynamic parameters of the IGBTs. Key considerations include matching VCE(sat) characteristics to ensure static current sharing and designing a symmetrical gate drive circuit and power layout to ensure dynamic current balance during switching events. For a detailed guide on this topic, exploring resources on IGBT paralleling techniques is recommended.

Technical Deep Dive

Analyzing the V-Series Technology for Optimal Loss Management

A deeper analysis of the 6MBI450V-120-50 reveals the engineering philosophy behind Fuji's V-Series IGBTs. The core challenge in power semiconductor design is managing the inverse relationship between conduction and switching losses. A design that drastically reduces VCE(sat) often results in slower switching speeds and higher switching losses, and vice versa. The V-Series technology addresses this by optimizing the chip structure to achieve a "sweet spot" ideal for a broad range of industrial applications.

This optimization is analogous to tuning a high-performance engine. You can configure an engine for maximum low-end torque (equivalent to low conduction loss for efficiency at steady state) or for peak horsepower at high RPM (equivalent to fast switching for efficiency in high-frequency applications). The V-Series is tuned for excellent all-around performance in the typical operating range of motor drives and UPS systems. The datasheet's performance curves for switching energy (Eon, Eoff) versus collector current (Ic) provide the empirical data needed for accurate loss calculations in a specific application, enabling engineers to precisely model system efficiency and thermal management requirements.

Strategic Design Considerations

Integrating the 6MBI450V-120-50 into a power system requires a holistic approach that leverages its strengths. The combination of high current capacity, a 1200V rating providing significant safety margin for 400V/480V AC line systems, and well-balanced loss characteristics makes it a strategic choice for new designs focused on long-term reliability and efficiency. Successful implementation hinges on proper gate drive design to control switching behavior and a thermal solution engineered to fully utilize its low Rth(j-c), ultimately enabling more compact and robust power conversion platforms.

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