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Fuji 6MBP75RS120 IGBT Module

Fuji 6MBP75RS120: A 1200V/75A CIB PIM. This all-in-one module simplifies AC drive design for superior reliability and compactness.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 62
· Date Code: 2024+
. Available Qty: 246
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6MBP75RS120 Specification

Fuji 6MBP75RS120 | 1200V/75A IGBT Power Integrated Module (PIM) for Robust AC Drives

The Fuji Electric 6MBP75RS120 is a highly integrated Power Integrated Module (PIM) engineered for demanding, high-reliability power conversion applications. As a cornerstone for compact and efficient system design, this module consolidates the key power stages of a typical drive into a single, thermally efficient package. It is specifically designed for engineers developing systems where space, assembly cost, and operational robustness are critical design drivers.

  • Voltage and Current Rating: 1200V / 75A, ideal for 380V-480V AC line applications.
  • Topology: Complete Converter-Inverter-Brake (CIB) configuration, featuring a three-phase input rectifier, a brake chopper, and a three-phase inverter bridge.
  • Core Technology: Utilizes Fuji's advanced trench-gate and field-stop IGBT technology, balancing low conduction losses with excellent switching performance.
  • Integrated Sensing: Includes a built-in NTC thermistor for real-time temperature monitoring, enabling sophisticated thermal protection strategies.

Technical Deep Dive: Integration and Reliability

The primary engineering advantage of the Fuji 6MBP75RS120 lies in its PIM architecture. By co-packaging the rectifier, brake, and inverter stages, it dramatically reduces the printed circuit board (PCB) footprint and simplifies the bill of materials (BOM). This integration minimizes stray inductance between power stages, a common source of voltage overshoot and electromagnetic interference (EMI) in designs using discrete components. The result is a cleaner switching waveform and a more streamlined gate drive design process.

From a reliability standpoint, this module is built for industrial environments. It boasts a square Reverse Bias Safe Operating Area (RBSOA) and a short-circuit withstand time (t_sc) of 10µs. This means the module can safely shut down under fault conditions like a motor phase-to-phase short, preventing catastrophic failure. This ruggedness, combined with the low collector-emitter saturation voltage (VCE(sat)), delivers a device that is both durable and efficient, minimizing thermal stress under heavy loads. For a deeper understanding of these critical parameters, our guide on IGBT failure analysis provides essential context.

Application Scenarios & Value Proposition

The versatile characteristics of the 6MBP75RS120 make it an excellent choice for a range of mid-power applications:

  • Variable Frequency Drives (VFDs): In motor control, the CIB topology directly corresponds to the required power architecture. This module serves as the power core for AC drives controlling motors in the 15 kW to 22 kW range, enabling compact, cost-effective, and reliable designs.
  • Servo Drives: The fast and soft-recovery freewheeling diodes (FWDs) paired with the IGBTs are crucial for the high dynamic performance required in robotic and machine tool servo drives. This ensures precise control and reduces losses during rapid acceleration and deceleration cycles.
  • Uninterruptible Power Supplies (UPS): The module's robust construction and integrated rectifier are highly valued in online UPS systems, ensuring dependable power conversion and battery management during critical grid-down events.

Key Technical Specifications

The following table provides a snapshot of the critical parameters for the Fuji 6MBP75RS120. For complete electrical and thermal characteristics, it is essential to consult the official datasheet.

Parameter Value
Max Collector-Emitter Voltage (V_CES) 1200 V
Continuous Collector Current (I_C) @ T_C=80°C 75 A
Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=75A 1.9 V (Typ) / 2.4 V (Max)
Short-Circuit Withstand Time (t_sc) ≥ 10 µs
Thermal Resistance (R_th(j-c)) - Inverter IGBT 0.25 °C/W (Max)
NTC Thermistor Resistance @ 25°C 5 kΩ ± 3%

For a detailed design-in reference, you can download the official 6MBP75RS120 datasheet.

Engineer's FAQ for the 6MBP75RS120

What is the primary advantage of selecting a PIM like the 6MBP75RS120 over a solution with discrete IGBTs and rectifiers?
The key advantage is system-level simplification. A PIM significantly reduces manufacturing complexity: fewer components to source, fewer parts to mount, and a much smaller PCB area. This integration also optimizes thermal performance by placing all major heat-generating components on a single, shared baseplate, simplifying heatsink design. Electrically, the short internal connections lead to lower parasitic inductance, which is critical for mitigating voltage spikes and improving EMI performance at higher switching frequencies.

How does the built-in NTC thermistor improve system design?
The integrated NTC thermistor provides a direct, real-time measurement of the module's baseplate temperature. This feedback is invaluable for the system's control logic. A microcontroller can continuously monitor this temperature to implement intelligent thermal management. For instance, it can trigger fan speed increases, reduce the switching frequency (derating), or initiate an orderly shutdown if the temperature exceeds safe limits, preventing thermal runaway and drastically improving the long-term reliability of the entire power system. If you are considering a new design or an upgrade for your application, contact our technical team to discuss how the Fuji 6MBP75RS120 can fit your requirements.

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