VoltaCore 755HA | High-Efficiency Power Module for Demanding Industrial Applications
Product Highlights Overview
The VoltaCore 755HA is a robust 1200V IGBT module engineered for high-power, high-reliability power conversion systems. Designed with the system engineer in mind, this module delivers an optimal balance between low conduction losses, superior switching performance, and exceptional thermal management. It's not just a component; it's a solution for increasing power density and system longevity in the most challenging industrial environments.
- Optimized for Efficiency: Features advanced trench-gate and field-stop technology to drastically reduce collector-emitter saturation voltage (VCE(sat)), minimizing conduction losses and heat dissipation.
- Superior Thermal Performance: Built on an AlN (Aluminum Nitride) substrate, the 755HA offers a very low thermal resistance (Rth), ensuring efficient heat transfer to the heatsink and enabling higher operational current.
- High Reliability: Engineered for extensive power cycling capability and a rugged Safe Operating Area (SOA), making it a dependable choice for applications with fluctuating loads like motor drives and welding power supplies.
- Simplified Integration: Housed in a standard industrial package with an auxiliary Kelvin emitter connection, this module simplifies gate drive design and ensures clean, precise switching signals.
A Technical Deep Dive into the 755HA's Core
At the heart of the 755HA's performance are two key engineering decisions. First, the implementation of a refined trench-gate field-stop (TGFS) silicon design. Unlike older planar technologies, this structure provides a superior plasma distribution during the on-state, leading to a significantly lower VCE(sat). For the design engineer, this directly translates into lower power dissipation, which can lead to smaller, less expensive heatsinks and a more compact overall system design. Second, the co-packaged freewheeling diode (FWD) is meticulously matched to the IGBT. It exhibits a soft recovery characteristic, which is crucial for reducing voltage overshoots and electromagnetic interference (EMI). This thoughtful pairing simplifies the design of snubber circuits and helps systems meet stringent EMC regulations with less filtering.
Performance in Critical Applications
The theoretical advantages of the 755HA IGBT module translate into tangible benefits across several high-stakes applications:
- Variable Frequency Drives (VFDs): In motor control, efficiency is paramount. The low total switching and conduction losses of the 755HA enable VFDs to operate with higher efficiency across a wide range of speeds and torque loads, reducing operational energy costs.
- Solar and Wind Inverters: The module's high reliability and excellent thermal performance are critical for renewable energy systems, which demand long service life in harsh outdoor conditions. Its efficiency in converting DC to AC power maximizes the energy harvested. For more on this, see our deep dive on the role of IGBTs in wind-to-grid conversion.
- Uninterruptible Power Supplies (UPS): The 755HA's robust SOA and ability to handle high surge currents ensure that critical infrastructure remains protected during power grid fluctuations. Its high efficiency in double-conversion mode minimizes standby power consumption.
- Industrial Welding: Welding applications demand rapid switching and the ability to withstand short-circuit events. The module's fast switching capability and specified short-circuit withstand time provide the control and durability required for precision welding processes.
755HA Key Technical Specifications
This data is intended as a quick reference for design engineers. For comprehensive modeling and simulation data, please refer to authoritative technical papers on IGBT performance, such as this study on IGBT modeling.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C) @ Tc=80°C | 75 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=75A, Tj=125°C | Typ. 1.75 V |
| Maximum Junction Temperature (T_jmax) | 175 °C |
| Total Switching Energy (E_ts) @ I_C=75A, V_CE=600V | Typ. 7.5 mJ |
| Thermal Resistance, Junction-to-Case (R_th(j-c)) per IGBT | Typ. 0.18 K/W |
| Short-Circuit Withstand Time (t_sc) | 10 µs |
Engineer's FAQ for the 755HA Module
1. How does the Kelvin emitter improve my gate drive design?The auxiliary Kelvin emitter provides a dedicated return path for the gate driver circuit, separate from the high-current power emitter path. This eliminates the effect of stray inductance in the emitter bond wires on the gate voltage. The result is a much cleaner, more accurate V_GE signal, leading to faster, more reliable switching and reducing the risk of parasitic turn-on.
2. With a Tjmax of 175°C, how much does thermal design matter?Extremely. While a higher Tjmax provides more design headroom, it is not a substitute for robust thermal management. The low thermal resistance (Rth) of the 755HA is a significant advantage, but realizing its full potential requires careful selection of thermal interface material (TIM) and heatsink design to keep the actual junction temperature well below the limit for long-term reliability.
For detailed selection guidance on this or other IGBT modules for your specific application, please do not hesitate to contact our technical team.
