Key Features
The 7MBR75VZ120-50 IGBT module offers several key features that set it apart from its competitors:
Applications
The FUJI 7MBR75VZ120-50 IGBT module is widely used in various applications, including:
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
- Collector-Emitter Voltage (VCES): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Continuous Collector Current (IC): 75A (at Tc=80°C)
- Collector Current Pulse (ICPULSE): 150A (for 1ms, at Tc=80°C)
- Reverse Collector Current (-IC): 75A (for 1ms pulse, at Tc=80°C)
- Collector Power Dissipation (PC): 385W (for 1 device)
- Operating Junction Temperature (Tj): 175°C
- Storage Temperature (Tstg): -40°C to +125°C
- Isolation Voltage:
- Between terminal and copper base: AC 2500V (for 1 minute)
- Between thermistor and others: AC 2500V (for 1 minute)
- Mounting Screw Torque: M5, 3.5 N·m