Datasheets:APTGT150DU170GPower Products CatalogStandard Package:1Category:Discrete Semiconductor ProductsFamily:IGBTs - ModulesSeries:-IGBT Type:Trench and Field StopConfiguration:Dual, Common SourceVoltage - Collector Emitter Breakdown (Max):1700VVce(on) (Max) @ Vge, Ic:2.4V @ 15V, 150ACurrent - Collector (Ic) (Max):250ACurrent - Collector Cutoff (Max):350µAInput Capacitance (Cies) @ Vce:13.5nF @ 25VPower - Max:890WInput:StandardNTC Thermistor:NoMounting Type:Chassis MountPackage / Case:SP6Supplier Device Package:SP6
Microsemi Power Products Group APTGT150DU170G New Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 7 PIN, APTGT150DU170G pictures, APTGT150DU170G price, APTGT150DU170G supplier
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Manufacturer Part Number: APTGT150DU170G
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MICROSEMI CORP
Package Description: FLANGE MOUNT, R-XUFM-X7
Pin Count: 7
Manufacturer: Microsemi Corporation
Risk Rank: 5.73
Additional Feature: AVALANCHE RATED
Case Connection: ISOLATED
Collector Current-Max (IC): 250 A
Collector-Emitter Voltage-Max: 1700 V
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
JESD-609 Code: e1
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 890 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 7 PIN
Shunlongwei Inspected every APTGT150DU170G before Ship, All APTGT150DU170G with 6 months warranty.
