#EUPEC, #BSM35GD120DN2E3224, #IGBT_Module, #IGBT, BSM35GD120DN2E3224 IGBT Modules N-CH 1.2KV 50A ;
BSM35GD120DN2E3224 Manufacturer: Infineon Product Category: IGBT Modules RoHS: No Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.7 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 150 nA Maximum Operating Temperature: + 150 C Package / Case: EconoPACK 2 Packaging: Bulk Brand: Infineon Technologies Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Pd - Power Dissipation: 280 W Factory Pack Quantity: 10 IGBT Modules N-CH 1.2KV 50A