Content last revised on April 30, 2024
BSM35GD120DN2E3224
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Continuous Collector Current at 25 C: 50 A
Gate-Emitter Leakage Current: 150 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2
Packaging: Bulk
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 280 W
Factory Pack Quantity: 10
IGBT Modules N-CH 1.2KV 50A
