Infineon BSM400GB60DN2 IGBT Module

Product Category:     IGBT Modules      BSM400GB60DN2
Manufacturer:     Infineon
RoHS:     No
Product:     IGBT Silicon Modules
Configuration:     Single
Collector- Emitter Voltage VCEO Max:     1200 V
Continuous Collector Current at 25 C:     550 A
Pd - Power Dissipation:     2.7 kW
Package / Case:     62 mm
Maximum Operating Temperature:     + 150 C
Brand:     Infineon Technologies
Height:     36.5 mm
Length:     106.4 mm
Maximum Gate Emitter Voltage:     +/- 20 V
Minimum Operating Temperature:     - 40 C
Mounting Style:     Screw
Factory Pack Quantity:     10
Width:     61.4 mm
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate