Content last revised on August 28, 2026
Product Category: IGBT Modules BSM400GB60DN2
Manufacturer: Infineon
RoHS: No
Product: IGBT Silicon Modules
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 550 A
Pd - Power Dissipation: 2.7 kW
Package / Case: 62 mm
Maximum Operating Temperature: + 150 C
Brand: Infineon Technologies
Height: 36.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate
