#EUPEC, #BSM400GB60DN2, #IGBT_Module, #IGBT, BSM400GB60DN2 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate;
Product Category: IGBT Modules BSM400GB60DN2 Manufacturer: Infineon RoHS: No Product: IGBT Silicon Modules Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Continuous Collector Current at 25 C: 550 A Pd - Power Dissipation: 2.7 kW Package / Case: 62 mm Maximum Operating Temperature: + 150 C Brand: Infineon Technologies Height: 36.5 mm Length: 106.4 mm Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 Width: 61.4 mm IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate