#Infineon, #BSM50GAL120DN2, #IGBT_Module, #IGBT, BSM50GAL120DN2 50A/1200V/IGBT+DIODE/2U; IGBT Modules 1200V 50A CHOPPER ; BSM50GAL120DN2
BSM50GAL120DN2 Manufacturer: Infineon Product Category: IGBT Modules RoHS: YES Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Half Bridge Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 78 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 400 W Package / Case: Half Bridge GAL 1 Maximum Operating Temperature: + 150 C Packaging: Tray Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 50A/1200V/IGBT+DIODE/2U; IGBT Modules 1200V 50A CHOPPER