CM1200DC-34S
HIGH POWER SWITCHING USE INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
- VCES (Collector-emitter voltage): 1700V (VGE = 0V)
- VGES (Gate-emitter voltage): ±20V (VCE = 0V, Tj = 25°C)
- IC (DC Collector current): 1200A (Tc = 110°C)
- ICRM (Collector current Pulse): 2400A (Note 1)
- IE (DC Emitter current): 1200A
- IERM (Emitter current Pulse): 2400A (Note 1)
- Ptot (Maximum power dissipation): 6750W (Tc = 25°C, IGBT part)
- Viso (Isolation voltage): 4000V RMS, sinusoidal, f = 60Hz, t = 1 min.
- Ve (Partial discharge extinction voltage): 1320V RMS, sinusoidal, f = 60Hz, QPD≤ 10 pC
- Tjop (Operating junction temperature): -50 ~ +150°C
- Tstg (Storage temperature): -50 ~ +150°C
- tpsc (Short circuit pulse width): 10μs, VCC = 1200V, VCE ≤ VCES, VGE = 15V, Tj =150°C
