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Mitsubishi CM800DY-24S IGBT Module

CM800DY-24S

CM800DY-24S Mitsubishi Insulated Gate Bipolar Transistor, 790A 1200V

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2024+
. Available Qty: 852
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CM800DY-24S Specification

Collector current lc .........….790A*

Collector-emitter voltage Vces .........................1200V

Maximum junction temperature Tjmax ......175℃

●Flat base Type

●Copper base plate

●RoHS Directive compliance

●UL Recognized under UL1557,File E323585

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :790A

Collector current Icp 1ms Tc=25°C :1600A

Collector power dissipation Pc:5355W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M4 1.3~1.7 N·m;

Mounting torque Mountiong to heat sink M6 3.5~4.5 N·m

Weight 1200g

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