Content last revised on November 26, 2025
CM800DY-24S: High-Current 1200V Dual IGBT Module for Demanding Power Systems
Introduction to a High-Performance Power Switching Solution
Engineered for Thermal Stability and High Current Density in Industrial Applications
The Mitsubishi CM800DY-24S is a high-performance dual IGBT module designed to provide robust and efficient power switching in demanding industrial systems. This S-Series module delivers a potent combination of specifications: 1200V | 800A | VCE(sat) 1.70V (typ). Its key engineering benefits include significantly reduced conduction losses and superior thermal performance, which are critical for system reliability. The module directly addresses the challenge of managing thermal stress in high-current applications by integrating low saturation voltage technology with an optimized internal layout. For systems requiring robust performance in high-power inverters and drives, the CM800DY-24S offers a thermally efficient and reliable core switching component.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The electrical and thermal characteristics of the CM800DY-24S are tailored for high-power conversion applications. The parameters below highlight the module's capacity for efficient operation and its resilience under demanding thermal loads. The low collector-emitter saturation voltage is particularly important, as it directly correlates to lower power dissipation during the on-state.
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | - | 1200 | V |
| Collector Current (DC) | IC | TC = 25°C | 800 | A |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 800A, VGE = 15V | 1.70 (Typ.) / 2.15 (Max.) | V |
| Power Dissipation | PC | TC = 25°C, per Transistor | 4400 | W |
| Thermal Resistance (Junction to Case) | Rth(j-c) | IGBT Part | 0.030 | °C/W |
| Junction Temperature | Tj | - | -40 to +150 | °C |
| Isolation Voltage | Viso | AC, 1 minute | 2500 | Vrms |
Download the CM800DY-24S datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Achieving System-Level Benefits in High-Frequency Power Conversion
The CM800DY-24S is best suited for applications where high current handling and thermal efficiency are non-negotiable. Its robust design and performance characteristics make it a cornerstone component in a variety of high-power industrial systems.
- Variable Frequency Drives (VFDs): In large-scale motor control, especially for applications like industrial conveyors, pumps, and fans, managing heat is a primary engineering challenge. The module's low VCE(sat) of 1.70V (typ) significantly reduces conduction losses. Think of VCE(sat) as electrical friction; a lower value means less energy is wasted as heat when the switch is on. This allows for smaller heatsinks or higher power density, directly impacting the overall size and cost of the VFD cabinet.
- Uninterruptible Power Supplies (UPS): For data centers and critical infrastructure, the reliability of a UPS system is paramount. The 800A current rating and excellent thermal cycling capability of the CM800DY-24S ensure stable operation during high-load and transient conditions, safeguarding sensitive equipment.
- Industrial Welding and Heating: In high-frequency induction heating and large-scale welding power supplies, the module's fast switching characteristics and robust thermal design contribute to precise energy delivery and long-term operational reliability under severe thermal stress.
For systems requiring even greater current capacity within a similar voltage class, the CM1000DXL-24S provides a higher rating of 1000A, making it a suitable alternative for the most demanding power conversion stages.
Technical Deep Dive
A Closer Look at the Interplay of VCE(sat) and Rth(j-c) for Long-Term Reliability
The long-term reliability of a power system is often dictated by its thermal performance. For the CM800DY-24S, two parameters work in concert to define its thermal character: Collector-Emitter Saturation Voltage (VCE(sat)) and Thermal Resistance (Rth(j-c)). A low VCE(sat) is the first line of defense, minimizing the amount of heat generated at the source. The low typical value of 1.70V at a full 800A load is a testament to the efficiency of the internal chip technology.
However, minimizing heat generation is only half the battle. The generated heat must be efficiently evacuated from the silicon chip to the heatsink. This is where the thermal resistance, Rth(j-c), becomes critical. The module's Rth(j-c) of 0.030 °C/W acts like a wide, clear highway for heat energy. A lower thermal resistance means that for every watt of power dissipated, the temperature difference between the chip's junction and the module's case is smaller. This efficiency in heat transfer keeps the junction temperature lower, which is directly linked to increased component lifespan and a reduced probability of failure, a critical consideration for designers seeking to understand IGBT datasheet parameters for reliability.
Frequently Asked Questions (FAQ)
How does the low VCE(sat) of 1.70V (typ) on the CM800DY-24S directly impact system efficiency?
A lower VCE(sat) directly reduces conduction losses, which is the power dissipated as heat when the IGBT is active (P_loss = VCE(sat) * IC). This reduction means less energy is wasted, leading to higher overall inverter efficiency and lower operating temperatures, which can reduce the required size and cost of the cooling system.
What is the primary benefit of the module's isolated baseplate?
The electrically isolated baseplate (rated for 2500Vrms) simplifies the thermal design process. It allows the module to be mounted directly onto a common heatsink without the need for additional insulating layers, which would otherwise add thermal resistance and complexity. This improves heat transfer and streamlines the assembly of the power stack.
Can the CM800DY-24S be used in parallel for higher current applications?
Yes, IGBT modules like the CM800DY-24S can be connected in parallel to achieve higher current ratings. However, successful paralleling requires careful design of the gate drive circuit and busbar layout to ensure balanced current sharing and simultaneous switching. For comprehensive guidance, consulting resources on IGBT Paralleling is highly recommended.
What does the dual, or half-bridge, configuration enable in a design?
The dual IGBT configuration provides two switches in a half-bridge topology within a single package. This is the fundamental building block for creating single-phase or three-phase inverters. Using a single module simplifies the power stage layout, reduces component count, and minimizes stray inductance compared to using discrete IGBTs.
Strategic Considerations for System Design
Integrating the CM800DY-24S into a power system requires a holistic approach that leverages its strengths in thermal management. Engineers should focus on optimizing the heatsink interface and ensuring a low-inductance gate drive layout to maximize the module's efficiency and reliability. The inherent benefits of its low-loss characteristics provide a significant advantage in developing compact, high-power density converters that meet modern energy efficiency standards. For those tasked with designing the next generation of industrial power electronics, this module offers a solid foundation built on proven Mitsubishi IGBT technology.