Mitsubshi CM800E3UA-24F IGBT Module

Collector current IC..........................................800A
Collector-emitter voltage VCES.........................1200V
Maximum junction temperature Tjmax..............175°C
●Flat base Type
●Copper base plate
●RoHS Directive compliance
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:800A
Collector current Icp:1600A
Collector power dissipation Pc:5355W
Collector-Emitter voltage VCES:2500V
Maximum junction temperature 175°C
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 3.5~4.5 N·m
Weight Typical value 1200g