#DYNEX, #DIM1800ESM12_A, #IGBT_Module, #IGBT, DIM1800ESM12-A Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM1800ESM12
Manufacturer Part Number: DIM1800ESM12-A000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X9Pin Count: 9Manufacturer: Dynex SemiconductorRisk Rank: 5.68Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 1800 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X9Number of Elements: 3Number of Terminals: 9Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN