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DYNEX DIM1800ESM12-A IGBT Module

#DYNEX, #DIM1800ESM12_A, #IGBT_Module, #IGBT, DIM1800ESM12-A Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM1800ESM12

· Categories: IGBT Module
· Manufacturer: DYNEX
· Price: US$
· Date Code: 11+
. Available Qty: 295
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DIM1800ESM12-A Specification

Sell DIM1800ESM12-A, #DYNEX #DIM1800ESM12-A Stock, DIM1800ESM12-A Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM1800ESM12-A, #IGBT_Module, #IGBT, #DIM1800ESM12_A
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/dim1800esm12-a.html

Manufacturer Part Number: DIM1800ESM12-A000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X9Pin Count: 9Manufacturer: Dynex SemiconductorRisk Rank: 5.68Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 1800 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X9Number of Elements: 3Number of Terminals: 9Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1800A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN

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