#Danfoss, #DP40H1200T101728, #IGBT_Module, #IGBT, DP40H1200T101728 Danfoss Stud-Base Silicon Rectifier Diodse Type 1200V 40A
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :40A
Collector current Icp 1ms Tc=25°C :800A
Operating junction temperature Tj:-55 ~+175°C
Storage temperature Tstg :-55 ~+175°C