Content last revised on November 5, 2025
EL4836HB-ICE | 650V 40A Trench Field-Stop IGBT for High-Frequency Power Conversion
The EL4836HB-ICE is a high-performance Insulated Gate Bipolar Transistor engineered for demanding, high-speed switching applications. By leveraging advanced Trench Field-Stop (TFS) technology, this device delivers an optimal balance between low conduction losses and minimal switching losses, setting a new benchmark for efficiency in power conversion systems. Its robust design and superior thermal stability make it a first-choice component for engineers designing next-generation power electronics.
Key Performance Highlights
- Optimized for High Frequencies: Exceptionally low turn-on (Eon) and turn-off (Eoff) losses enable efficient operation in high-frequency SMPS, PFC circuits, and welding inverters.
- Low Conduction Loss: A typical collector-emitter saturation voltage (Vce(sat)) of just 1.65V at its nominal current rating minimizes heat generation and improves overall system efficiency.
- Superior Thermal Stability: The positive temperature coefficient of Vce(sat) ensures safe and reliable paralleling of multiple devices, preventing thermal runaway and simplifying high-power designs.
- Enhanced Ruggedness: Packaged in the industry-standard TO-247, the EL4836HB-ICE is built for high reliability and excellent thermal dissipation in challenging industrial environments.
Critical Parameters at a Glance
For a comprehensive overview, you can download the full EL4836HB-ICE datasheet. The table below summarizes the most critical specifications for design engineers.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 650V |
| Continuous Collector Current (Ic) @ Tc=100°C | 40A |
| Collector-Emitter Saturation Voltage (Vce(sat)), typ @ Ic=40A | 1.65V |
| Total Switching Energy (Ets), typ @ Ic=40A | 0.65mJ |
| Maximum Junction Temperature (Tj,max) | 175°C |
Engineering Deep Dive: The Trench Field-Stop Advantage
The performance of the EL4836HB-ICE is rooted in its sophisticated chip architecture. Unlike older planar IGBTs, this device utilizes a Trench Gate structure combined with a Field-Stop layer. Here’s the engineering value:
- Trench Gate: This structure increases the channel density on the silicon die, dramatically reducing the on-state resistance. The direct result is a lower VCE(sat), which translates to lower conduction losses—a critical factor in applications with high duty cycles.
- Field-Stop (FS) Layer: This additional layer, strategically placed within the N-drift region, allows for a much thinner overall chip. A thinner chip means less stored charge (tail current) during turn-off, significantly reducing switching losses (Eoff). This is fundamental to achieving high efficiency in systems operating above 20kHz. Understanding this hybrid IGBT structure is key to modern power design.
Application Scenarios: Where the EL4836HB-ICE Excels
The unique characteristics of the EL4836HB-ICE make it an ideal solution for specific power systems:
- High-Frequency Welding Inverters: In advanced welding power supplies, fast switching enables precise control over the arc, resulting in cleaner welds. The low total power loss of the EL4836HB-ICE allows for more compact, air-cooled designs without sacrificing power output.
- Solar Inverters and UPS Systems: Efficiency is paramount. The low conduction and switching losses directly contribute to higher energy conversion efficiency, maximizing the power harvested from solar panels or extending battery life in a UPS.
- Switched-Mode Power Supplies (SMPS) & PFC: By enabling higher switching frequencies, this IGBT allows designers to use smaller, lighter, and more cost-effective inductors and capacitors, increasing the overall power density of the final product.
Selection Guidance: Positioning Against Alternatives
Choosing the right power switch is a critical design decision. Here’s how the EL4836HB-ICE compares:
- vs. Standard 1200V IGBTs: While 1200V devices offer a higher blocking voltage, they typically have higher switching losses. For 400V bus applications, the 650V rating of the EL4836HB-ICE provides sufficient safety margin while its significantly lower switching losses make it the superior choice for high-frequency designs.
- vs. SiC MOSFETs: Silicon Carbide devices offer the lowest switching losses and highest frequency capability. However, the EL4836HB-ICE presents a more cost-effective solution for applications in the 20-60kHz range, providing a perfect balance of performance and system cost. This makes it a pragmatic upgrade from older MOSFETs or slower IGBTs. A thorough understanding of SiC vs. IGBT trade-offs is essential for future-proofing your design.
Frequently Asked Questions (FAQ)
What is the recommended gate drive voltage?
For optimal performance, a gate voltage of +15V is recommended for turn-on. To ensure immunity against parasitic turn-on in noisy, high dV/dt environments, a negative turn-off voltage (e.g., -5V to -15V) is advised, though a 0V turn-off is feasible in well-designed layouts. Always consult the datasheet for precise gate charge and timing characteristics.
Is this IGBT suitable for hard-switching topologies?
Absolutely. The EL4836HB-ICE is specifically designed and optimized for hard-switching applications. Its low Eon and fast-recovery anti-parallel diode minimize the losses and stress associated with hard-switching events, ensuring high reliability. Effective thermal management is crucial to prevent common causes of IGBT failure in these demanding circuits.
For detailed pricing, availability, or to discuss integrating the EL4836HB-ICE into your next project, please contact our technical team for expert support on our full range of IGBT modules.
