Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

MITSUBISHI FM30DY-9

  • FM30DY-9

FM30DY-9 Power Field-Effect Transistor, 30A I(D), 450V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM30DY-9

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 265
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on July 2, 2023

Manufacturer Part Number: FM30DY-9Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: DEPLETION MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 90 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 30A I(D), 450V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

More from MITSUBISHI

Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi