Mitsubishi FM600TU-07A IGBT Module

Mitsubishi FM600TU-07A is a high-power insulated gate bipolar transistor (IGBT) module designed for use in various industrial applications. The module(FM600TU-07A) has maximum collector-emitter voltage 600 volts, maximum collector current 800 amperes, & maximum power dissipation 1900 watts. It built-in temperature sensor, allows for precise temperature monitoring & protection against overheating.

The FM600TU-07A module uses advanced IGBT technology, which offers high switching speed, low on-state voltage drop, and high current handling capability.

FM600TU-07A Specification:

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:75V

Gate-Emitter voltage VGES:±20V

Collector current Ic:300A

Collector current Icp:600A

Collector power dissipation Pc:960W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight Typical value 600g

Power Field-Effect Transistor 300A I(D) 75V 0.00073ohm 6-Element N-Channel Silicon metal-oxide Semiconductor FET MODULE-14