#International Rectifier, #IRGR2B60KDTRRPBF, #IGBT_Module, #IGBT, IRGR2B60KDTRRPBF Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel,; IRGR2B60KDTRRPBF
Manufacturer Part Number: IRGR2B60KDTRRPBFRohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: ,ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.18Collector Current-Max (IC): 6.3 ACollector-Emitter Voltage-Max: 600 VFall Time-Max (tf): 75 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VMoisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 35 WRise Time-Max (tr): 25 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTime Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel,