IDTech ITSX88E4 | Engineered for Ultra-Low Loss in High-Frequency Power Conversion
The IDTech ITSX88E4 is a high-performance 1200V, 100A IGBT module engineered for power electronics engineers who refuse to compromise on efficiency and reliability. Designed to excel in demanding applications, this module integrates cutting-edge semiconductor technology within a robust, industry-standard package, providing a superior solution for next-generation power converters.
Product Highlights at a Glance
- Voltage and Current Rating: 1200V Collector-Emitter Voltage (VCES) / 100A Collector Current (IC) at Tcase=100°C.
- Ultra-Low Conduction Loss: Features exceptionally low VCE(sat), minimizing heat dissipation and improving overall system efficiency.
- Optimized Switching Performance: Engineered for a balanced trade-off between switching losses and conduction losses, making it ideal for operating frequencies up to 20kHz.
- Enhanced Thermal Management: Built on an advanced AlN substrate with superior thermal conductivity, ensuring reliable operation under heavy loads.
- Robust Short-Circuit Capability: Offers a high short-circuit withstand time (tsc), enhancing system durability against fault conditions.
Technical Deep Dive: The Engineering Advantage
The performance of the IDTech ITSX88E4 is not accidental; it is the result of deliberate design choices at the silicon level. Two key technologies set this module apart:
1. Advanced Trench Field-Stop (TFS) Technology: Unlike conventional planar IGBTs, the ITSX88E4 utilizes a refined trench-gate structure. This dramatically increases the channel density, leading to a significant reduction in on-state voltage drop, or low VCE(sat). This is coupled with an optimized field-stop layer that allows for a thinner n-drift region without sacrificing blocking voltage capability. The direct engineering benefit is a steep reduction in conduction losses, which means less energy wasted as heat, enabling designers to either increase power density or reduce the size and cost of thermal management hardware.
2. Integrated Low-Inductance Kelvin Emitter: Standard module packages suffer from stray inductance in the main emitter path, which can introduce voltage drops and ringing during high-speed switching events. This corrupts the gate driver's emitter reference, leading to control inaccuracies and potential instability. The ITSX88E4 incorporates a dedicated Kelvin emitter connection directly at the IGBT chip. This provides a clean, unadulterated voltage reference for the gate driver, enabling precise switching control, faster turn-on/off times, and reduced EMI. This simplifies gate drive design and improves overall system stability.
Key Parameter Overview
For detailed specifications and characteristic curves, please refer to the official datasheet. For a quick assessment, the primary parameters of the IDTech ITSX88E4 are listed below.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC), Tcase=100°C | 100 A |
| Collector-Emitter Saturation Voltage (VCE(sat)), Tj=125°C, IC=100A | Typ. 1.85 V |
| Total Switching Energy (Ets), Tj=125°C | Typ. 12 mJ |
| Short-Circuit Withstand Time (tsc) | ≥ 10 µs |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) | Typ. 0.18 K/W |
Application Scenarios & Value Proposition
The ITSX88E4 is not just a component; it's a problem-solver for high-power systems:
- Variable Frequency Drives (VFDs): In motor drives, conduction losses are a dominant factor. The module's extremely low VCE(sat) directly translates to higher inverter efficiency, reducing operational costs and enabling more compact, fan-less designs for smaller drives.
- Solar Inverters: Maximizing energy harvest is the primary goal. The ITSX88E4's excellent thermal performance and low total losses ensure peak conversion efficiency, even in high-ambient-temperature environments typical of solar installations.
- Uninterruptible Power Supplies (UPS): Reliability is non-negotiable. The module's high short-circuit withstand time and robust construction provide the durability needed to handle grid anomalies and load faults, ensuring continuous, clean power for critical infrastructure. For a deeper understanding of component durability, explore our guide to preventing IGBT failures.
Frequently Asked Questions (FAQ)
1. Is the ITSX88E4 suitable for paralleling to achieve higher current ratings?
Absolutely. The ITSX88E4 is designed with a positive temperature coefficient for its VCE(sat). This intrinsic characteristic ensures that as a chip heats up, its on-state resistance increases slightly, naturally forcing current to balance among parallel-connected modules. This, combined with the Kelvin emitter that helps synchronize gate signals, makes it an excellent candidate for building high-current inverter legs.
2. How does the AlN substrate benefit my design compared to a standard Al2O3 substrate?
Aluminum Nitride (AlN) has a thermal conductivity that is 5-7 times higher than that of traditional Aluminum Oxide (Al2O3). This means heat generated at the IGBT junction can be transferred to the heatsink much more efficiently. The practical result is a lower junction temperature for the same power dissipation, leading to significantly improved reliability, longer lifetime, and better power cycling capability. This is a critical factor for applications with frequent load changes, like servo drives.
For more expert insights into selecting and implementing power electronics, browse our full range of IGBT modules or contact our technical team for application-specific support.
