#IXYS, #IXA55I1200HJ, #IGBT_Module, #IGBT, IXA55I1200HJ Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, ISOPLUS247
Manufacturer Part Number: IXA55I1200HJPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: ISOPLUSPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer Package Code: ISOPLUSECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.26Case Connection: ISOLATEDCollector Current-Max (IC): 84 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 290 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 84A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, ISOPLUS247, 3 PIN