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IXYS IXFH58N20

  • IXFH58N20

IXFH58N20 Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN; IXFH58N20

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 2053
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Content last revised on May 25, 2023

Manufacturer Part Number: IXFH58N20Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 7.87Additional Feature: AVALANCHE RATEDCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (Abs) (ID): 58 ADrain Current-Max (ID): 58 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 300 WPower Dissipation-Max (Abs): 300 WPulsed Drain Current-Max (IDM): 232 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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