Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

IXYS IXFN61N50 New IGBT Module

#IXYS, #IXFN61N50, #IGBT_Module, #IGBT, IXFN61N50 Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 433
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
Tags:
-- OR --

Request For Price Now !

IXFN61N50 Specification

Sell IXFN61N50, #IXYS #IXFN61N50 New Stock, IXFN61N50 Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN61N50, #IGBT_Module, #IGBT, #IXFN61N50
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixfn61n50.html

Manufacturer Part Number: IXFN61N50Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-D4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.83Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 61 ADrain Current-Max (ID): 61 ADrain-source On Resistance-Max: 0.075 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-D4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 625 WPower Dissipation-Max (Abs): 625 WPulsed Drain Current-Max (IDM): 244 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Latest Components
Mitsubishi
SEMIKRON
Sharp