IXYS IXGH10N100U1 IGBT Module

Manufacturer Part Number: IXGH10N100U1Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer: IXYS CorporationRisk Rank: 8.46Case Connection: COLLECTORCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 1000 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 100 WPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1850 nsTurn-on Time-Nom (ton): 300 nsVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD