#IXYS, #IXGT72N60B3, #IGBT_Module, #IGBT, IXGT72N60B3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN; IXG
Manufacturer Part Number: IXGT72N60B3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: PLASTIC, TO-268, 3 PINPin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEFall Time-Max (tf): 160 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 540 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA, PLASTIC, TO-268, 3 PIN