Toshiba MG200Q2YS50 | Robust 1200V/200A Six-Pack IGBT for Industrial Power Conversion
The Toshiba MG200Q2YS50 is an established and highly reliable N-channel Insulated Gate Bipolar Transistor (IGBT) module, engineered as a cornerstone component for three-phase inverter systems. This device isn't about chasing the highest switching frequencies; it's about delivering steadfast performance and rugged durability in the high-stress environments of industrial power electronics. As a six-pack module, it integrates a full three-phase bridge into a single, thermally efficient package, simplifying mechanical layout, reducing component count, and enhancing system reliability.
Key Performance Highlights
- High Voltage & Current Rating: With a 1200V collector-emitter voltage (V_CES) and a 200A collector current (I_C), it provides ample headroom for demanding 380/480V AC applications.
- Integrated Six-Pack Configuration: Contains six IGBTs in a three-phase bridge configuration, streamlining the design of motor drives and inverters.
- Proven Durability: Built with Toshiba's established planar technology, this module is a known quantity, prized for its long service life in challenging industrial settings.
- Optimized for Low-Frequency Operation: Its characteristics are tailored for applications where conduction losses are the primary consideration, such as variable frequency drives and uninterruptible power supplies.
Key Parameters at a Glance
For engineers requiring quick access to critical data, the table below summarizes the core specifications of the Toshiba MG200Q2YS50. A comprehensive datasheet is available for detailed analysis and thermal modeling.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Gate-Emitter Voltage (V_GES) | ±20 V |
| Continuous Collector Current (I_C) @ T_c=80°C | 200 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=200A | 2.7 V (Typ.) |
| Total Power Dissipation (P_C) | 1250 W |
| Operating Junction Temperature (T_j) | -40 to +150 °C |
For complete electrical and thermal characteristics, you can download the Toshiba MG200Q2YS50 datasheet here.
Engineered for Demanding Industrial Applications
The true value of an IGBT module is proven in its application performance. The MG200Q2YS50 excels in environments where reliability and robust power handling are non-negotiable.
- Variable Frequency Drives (VFDs): In industrial motor control, this module provides the raw power switching capability needed to drive medium-to-large AC induction motors. Its thermal stability and rugged construction ensure consistent performance under variable load conditions.
- Uninterruptible Power Supplies (UPS): For commercial and industrial UPS systems, reliability is paramount. The MG200Q2YS50's proven design provides a high-confidence power stage for inverters, ensuring critical loads remain protected. For a deeper understanding of potential failure modes and how to prevent them, our guide on IGBT failure analysis is an essential resource.
- Welding Power Supplies: The high current handling (200A) and robust Safe Operating Area (SOA) make this module a suitable candidate for the output stages of industrial welding equipment, capable of withstanding the demanding pulsed power cycles.
- Servo Drives: While not designed for ultra-high frequency response, it serves as a powerful and reliable solution in larger robotic servo drives where torque and power density take precedence over extreme switching speeds.
Engineer's FAQ for the MG200Q2YS50
Based on our experience, engineers often have the following questions when integrating this type of workhorse IGBT module.
1. What are the key gate drive requirements for this module?
To ensure optimal performance, a robust Gate Drive circuit is essential. A recommended drive voltage is +15V for turn-on and a negative voltage between -5V and -10V for turn-off. The negative bias provides a strong defense against parasitic turn-on induced by dV/dt, especially given the module's internal inductances.
2. How does its V_CE(sat) impact design choices?
The typical VCE(sat) of 2.7V at rated current indicates that the device is optimized for minimizing conduction losses rather than switching losses. This makes the Toshiba MG200Q2YS50 an excellent, cost-effective choice for applications operating below ~10 kHz, where conduction loss is the dominant factor in the overall efficiency equation. For higher frequencies, a module with lower E_on/E_off values would be more appropriate.
If your application requires a different balance of performance, cost, or integration, please contact our technical team for a personalized consultation and to explore our full range of power modules.
