#IXYS, #IXTA08N50D2, #IGBT_Module, #IGBT, IXTA08N50D2 Power Field-Effect Transistor, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263A
Manufacturer Part Number: IXTA08N50D2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: PLASTIC PACKAGE-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.29Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDrain-source On Resistance-Max: 4.6 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Mode: DEPLETION MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 60 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3