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IXYS IXXH60N65B4H1

  • IXXH60N65B4H1

IXXH60N65B4H1 Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,; IXXH60N65B4H1

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1976
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Content last revised on June 17, 2023

Manufacturer Part Number: IXXH60N65B4H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.16Collector Current-Max (IC): 116 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 380 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,

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