#IXYS, #IXXH60N65B4H1, #IGBT_Module, #IGBT, IXXH60N65B4H1 Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,; IXXH60N65B4H1
Manufacturer Part Number: IXXH60N65B4H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.16Collector Current-Max (IC): 116 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 380 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,