Sell IXYH30N120C3D1 IXYS IGBT Module

#IXYS, #IXYH30N120C3D1, #IGBT_Module, #IGBT, IXYH30N120C3D1 Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,; IXYH30N120C3D1

· Categories: IGBT Module

· Manufacturer: IXYS

· Price: US$

· Date Code: Lead free / RoHS Compliant

. Available Qty: 1737

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IXYH30N120C3D1 Specification

Sell IXYH30N120C3D1, #IXYS #IXYH30N120C3D1 Stock, IXYH30N120C3D1 Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,; IXYH30N120C3D1, #IGBT_Module, #IGBT, #IXYH30N120C3D1

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Manufacturer Part Number: IXYH30N120C3D1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.16Collector Current-Max (IC): 66 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 416 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,

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IXYS IXYH30N120C3D1 IGBT Module

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IXYH30N120C3D1 Specification

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